JAJSP52C September   2022  – December 2022 ESD1LIN24-Q1 , ESD751-Q1 , ESD761-Q1

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings—AEC Specification
    3. 6.3  ESD Ratings—IEC Specification
    4. 6.4  ESD Ratings - ISO Specification
    5. 6.5  Recommended Operating Conditions
    6. 6.6  Thermal Information
    7. 6.7  Electrical Characteristics
    8. 6.8  Typical Characteristics – ESD751
    9. 6.9  Typical Characteristics – ESD1LIN24
    10. 6.10 Typical Characteristics - ESD761
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 IEC 61000-4-5 Surge Protection
      2. 7.3.2 IO Capacitance
      3. 7.3.3 Dynamic Resistance
      4. 7.3.4 DC Breakdown Voltage
      5. 7.3.5 Ultra Low Leakage Current
      6. 7.3.6 Clamping Voltage
      7. 7.3.7 Industry Standard Packages
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 用語集
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.7 Electrical Characteristics

over TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS DEVICE MIN TYP MAX UNIT
VRWM Reverse stand-off voltage –24 24 V
VBRF Breakdown voltage(2) IIO = 10 mA, IO to GND 25.5 35.5 V
VBRR Breakdown voltage(2) IIO = –10 mA, IO to GND –35.5 –25.5 V
VCLAMP Clamping voltage(2) IPP = 4.3 A, tp = 8/20 µs, IO to GND and GND to IO ESD1LIN24-Q1 37 V
IPP = 2.8 A, tp = 8/20 µs, IO to GND and GND to IO ESD751-Q1 36.5
IPP = 1.8 A, tp = 8/20 µs, IO to GND and GND to IO ESD761-Q1 36.3
VCLAMP Clamping voltage(4) IPP = 16 A, TLP, IO to GND and GND to IO ESD1LIN24-Q1 40 V
ESD751-Q1 41.5
ESD761-Q1 42.5 V
ILEAK Leakage current VIO = ±24 V, IO to GND -50 1 50 nA
RDYN Dynamic resistance(4) ESD1LIN24-Q1 0.5 Ω
ESD751-Q1 0.6
ESD761-Q1 0.53
CL Line capacitance VIO = 0 V, f = 1 MHz, Vpp = 30 mV, IO to GND ESD1LIN24-Q1 2.3 3.8 pF
ESD751-Q1 1.6 2.7
ESD761-Q1 1.1 1.8
(1) VBRF and VBRR are defined as the voltage when ±10 mA is applied in the positive-going direction, before the device latches into the snapback state.
(2) Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.
(3) Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008