SLAS840C March   2012  – October 2015 HD3SS3415

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Description continued
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Dissipation Ratings
    7. 7.7 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 AC Coupling Caps
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Community Resources
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings(1)(2)

Over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply voltage (VDD) Absolute minimum/maximum supply voltage range –0.5 4 V
Voltage Differential I/O –0.5 4 V
Control pin (SEL) –0.5 VDD+0.5
Storage temperature (Tstg) –65 150 ºC
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential voltages, are with respect to network ground terminal.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

Typical values for all parameters are at VDD = 3.3V and TA = 25°C. (Temperature limits are specified by design)
MIN TYP MAX UNIT
VDD Supply voltage 3.0 3.3 3.6 V
VIH Input high voltage (SEL Pin) 2.0 VDD V
VIL Input low voltage (SEL Pin) –0.1 0.8 V
VI/O_Diff Differential voltage (differential pins) Switch I/O diff voltage 0 1.8 VPP
VI/O_CM Common voltage (differential pins) Switch I/O common mode voltage 0 2.0 V
TA Operating free-air temperature Ambient temperature 0 70 °C

7.4 Thermal Information

THERMAL METRIC(1) HD3SS3415 UNIT
TQFN (RUA)
42 PINS
RθJA Junction-to-ambient thermal resistance 53.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 38.2 °C/W
RθJB Junction-to-board thermal resistance 21.9 °C/W
ψJT Junction-to-top characterization parameter 27.4 °C/W
ψJB Junction-to-board characterization parameter 5.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 27.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

RSC and RLOAD = 50 Ω and CL = 50 pF, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DEVICE PARAMETERS
IIH Input High Voltage (SEL) VDD = 3.6 V; VIN = VDD 95 µA
IIL Input Low Voltage (SEL) VDD = 3.6 V; VIN = GND 1 µA
ILK Leakage Current (Differential I/O pins) VDD = 3.6 V; VIN = 0 V; VOUT = 2 V
(ILK On OPEN outputs) [Ports B and C]
130 µA
VDD = 3.6 V, VIN = 2 V; VOUT = 0 V
(ILK On OPEN outputs) [Port A]
4
IDD Supply Current VDD = 3.6 V; SEL = VDD/GND; Outputs Floating 4.7 6 mA
CON Outputs ON Capacitance VIN = 0 V; Outputs Open; Switch ON 1.5 pF
COFF Outputs OFF Capacitance VIN = 0 V; Outputs Open, Switch OFF 1 pF
RON Output ON resistance VDD = 3.3 V; VCM = 0.5 V to 1.5 V ; IO = –8 mA 5 8 Ω
ΔRON On resistance match between channels VDD = 3.3 V ; –0.35 V ≤ VIN ≤ 1.2 V; IO = –8 mA 2 Ω
On resistance match between pairs of the same channel VDD = 3.3 V; –0.35 V ≤ VIN ≤ 1.2 V; IO = –8 mA 0.7 Ω
RFLAT_ON On resistance flatness
(RON(MAX) – RON(MAIN)
VDD = 3.3 V; –0.35 V ≤ VIN ≤ 1.2 V 1.15 Ω
tPD Switch propagation delay Rsc and RLOAD = 50 Ω 85 ps
SEL-to-switch Ton Rsc and RLOAD = 50 Ω 70 250 ns
SEL-to-switch Toff 70 250
TSKEW_Inter Inter-pair output skew (CH-CH) Rsc and RLOAD = 50 Ω 20 ps
TSKEW_Intra Intra-pair output skew (bit-bit) 8 ps
RL Differential return loss (VCM = 0 V)
See Typical Characteristics
f = 0.3 MHz –28 dB
f = 2500 MHz –12
f = 4000 MHz –11
XTALK Differential Crosstalk(VCM = 0 V)
See Typical Characteristics
f = 0.3 MHz –90 dB
f = 2500 MHz –39
f = 4000 MHz –35
OIRR Differential Off-Isolation(VCM = 0 V)
See Typical Characteristics
f = 0.3 MHz –75 dB
f = 2500 MHz –22
f = 4000 MHz –19
IL Differential Insertion Loss (VCM = 0 V)
See Typical Characteristics
f = 0.3 MHz –0.5 dB
f = 2500 MHz –1.1
f = 4000 MHz –1.5
BW Band Width At –3 dB 8 GHz

7.6 Dissipation Ratings

MIN MAX UNIT
PD Power Dissipation 15.5 21.6 mW
HD3SS3415 on_off_swt_las828.gif Figure 1. Select to Switch Output On (TON) and Off (TOFF) Timing Diagram
HD3SS3415 prop_dly_tst_las840.gif
TSKEWInter = Difference between tPD for any two pairs of outputs
TSKEWIntra = Difference between tP1 and tP2 of same pair
Figure 2. Propagation Delay Timing Diagram and Test Setup

7.7 Typical Characteristics

HD3SS3415 insert_loss_las840.gif Figure 3. Differential Insertion Loss
HD3SS3415 diff_crosstalk_las840.gif Figure 5. Differential Crosstalk
HD3SS3415 diff_return_loss_las840.gif Figure 4. Differential Return Loss
HD3SS3415 diff_off_iso_las840.gif Figure 6. Differential Off Isolation