SBOS508A December   2009  – December 2015 INA129-EP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Noise Performance
      2. 7.4.2 Input Common-Mode Range
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Setting the Gain
        2. 8.2.2.2 Dynamic Performance
        3. 8.2.2.3 Offset Trimming
        4. 8.2.2.4 Input Bias Current Return Path
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Low Voltage Operation
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VS Supply voltage ±18 V
Analog input voltage ±40 V
Output short-circuit (to ground) Continuous
TA Operating temperature –55 125 °C
TJ Junction temperature 150 °C
Lead temperature (soldering, 10s) 300 °C
Tstg Storage temperature –55 125 °C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±4000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V power supply ±2.25 ±15 ±18 V
Input common-mode voltage range for VO = 0 V - 2 V V + –2 V
TA operating temperature INA129-EP –55 125 °C

6.4 Thermal Information

THERMAL METRIC(1) INA129-EP UNIT
D (SOIC)
8 PINS
RθJA Junction-to-ambient thermal resistance 110 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 57 °C/W
RθJB Junction-to-board thermal resistance 54 °C/W
ψJT Junction-to-top characterization parameter 11 °C/W
ψJB Junction-to-board characterization parameter 53 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

At TA = 25°C, VS = ±15 V, RL = 10 kΩ (unless otherwise noted)
PARAMETER TEST CONDITIONS TA = 25°C TA = 25°C UNIT
MIN TYP MAX MIN TYP MAX
INPUT
Offset Voltage, RTI
Initial TA = 25°C ±100 ±800/G µV
Overtemperature ±150 ±2050/G
vs power supply TA = 25°C, VS = ±2.25 V to ±18 V ±1.6 ±175/G µV/V
Overtemperature ±1.8 ±175/G
Long-term stability ±1 ±3/G µV/mo
Impedance, differential 1010 || 2 Ω || pF
Common mode 1011||9 Ω || pF
Common mode voltage range(1) VO = 0 V (V+) − 2 (V+) − 1.4 V
(V−) + 2 (V−) + 1.7 V
Safe input voltage ±40 V
Common-mode rejection VCM = ±13 V,
ΔRS = 1 kΩ		 G = 1 75 86 dB
Overtemperature 67
G = 10 93 106
Overtemperature 84
G = 100 113 125
Overtemperature 98
G = 1000 113 130
Overtemperature 98
CURRENT
Bias current ±2 ±8 nA
Overtemperature ±16
Offset Current ±1 ±8 nA
Overtemperature ±16
NOISE
Noise voltage, RTI G = 1000,
RS = 0 Ω		 f = 10 Hz 10 nV/√Hz
f = 100 Hz 8
f = 1 kHz 8
fB = 0.1 Hz to 10 Hz 0.2 µVpp
Noise current G = 1000,
RS = 0 Ω		 f = 10 Hz 0.9 pA/√Hz
f = 1 kHz 0.3
fB = 0.1 Hz to 10 Hz 30 pAPP
GAIN
Gain equation 1 +
(49.4 kΩ/RG)		 V/V
Range of gain 1 10000 V/V
Gain error G = 1 ±0.05% ±0.1%
Overtemperature ±0.15%
G = 10 ±0.02% ±0.5%
Overtemperature ±0.65%
G = 100 ±0.05% ±0.65%
Overtemperature ±1.1%
G = 1000 ±0.5% ±2%
Gain vs temperature(2) G = 1 ±1 ±10 ppm/°C
49.4-kΩ resistance(2)(3) ±25 ±100 ppm/°C
Nonlinearity VO = ±13.6 V,
G = 1		 ±0.0001 ±0.0018 % of FSR
Overtemperature ±0.0035
G = 10 ±0.0003 ±0.0035
Overtemperature ±0.0055
G = 100 ±0.0005 ±0.0035
Overtemperature ±0.0055
G = 1000 ±0.001 See (4)
OUTPUT
Voltage Positive RL = 10 kΩ (V+) − 1.4 (V+) − 0.9 V
Negative RL = 10 kΩ (V−) + 1.4 (V−) + 0.8
Load capacitance stability 1000 pF
Short-circuit current +6/−15 mA
FREQUENCY RESPONSE
Bandwidth, −3 dB G = 1 1300 kHz
G = 10 700
G = 100 200
G = 1000 20
Slew rate VO = ±10 V,
G = 10		 4 V/µs
Settling time, 0.01% G = 1 7 µs
G = 10 7
G = 100 9
G = 1000 80
Overload recovery 50% overdrive 4 µs
POWER SUPPLY
Voltage range ±2.25 ±15 ±18 V
Current, total VIN = 0 V ±700 ±750 µA
Overtemperature ±1200
TEMPERATURE RANGE
Specification −55 125 °C
Operating −55 125 °C
(1) Input common-mode range varies with output voltage — see Typical Characteristics.
(2) Specified by wafer test.
(3) Temperature coefficient of the 49.4-kΩ term in the gain equation.
(4) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.

6.6 Typical Characteristics

At TA = 25°C, VS = ±15 V, unless otherwise noted.
INA129-EP gain-freq_bos501.gif
Figure 1. Gain vs Frequency
INA129-EP pwrsupp-freq_bos501.gif
Figure 3. Positive Power-Supply Rejection vs Frequency
INA129-EP cmi-vo15_bos501.gif
VS = ±15 V
Figure 5. Input Common-Mode Range vs Output Voltage
INA129-EP inrefvn-freq_bos501.gif
Figure 7. Input-Referred Noise vs Frequency
INA129-EP ovin_bos501.gif
Figure 9. Input Overvoltage Voltage-to-Current Characteristics
INA129-EP vswing_io_bos501.gif
Figure 11. Output Voltage Swing vs Output Current
INA129-EP maxvo_freq_bos501.gif
Figure 13. Maximum Output Voltage vs Frequency
INA129-EP moderej-freq_bos501.gif
Figure 2. Common-Mode Rejection vs Frequency
INA129-EP negpwrsupp-freq_bos501.gif
Figure 4. Negative Power-Supply Rejection vs Frequency
INA129-EP cmi-vo5_bos501.gif
VS = ±5 V, ±2.5 V
Figure 6. Input Common-Mode Range vs Output Voltage
INA129-EP tset_gain_bos501.gif
Figure 8. Settling Time vs Gain
INA129-EP invoff_time_bos501.gif
Figure 10. Input Offset Voltage Warm-Up
INA129-EP vswing_vsupp_bos501.gif
Figure 12. Output Voltage Swing vs Power Supply Voltage
INA129-EP thd_freq_bos501.gif
Figure 14. Total Harmonic Distortion + Noise vs Frequency