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INA129-EP

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データシート

INA129-EP

アクティブ
データシート ご注文はこちら

製品詳細

Number of channels 1 Vs (max) (V) 36 Vs (min) (V) 4.5 Input offset (±) (max) (µV) 100 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 10000 Noise at 1 kHz (typ) (nV√Hz) 8 Features Current Feedback, Overvoltage protection CMRR (min) (dB) 113 Input offset drift (±) (max) (µV/°C) 150 Input bias current (±) (max) (nA) 8 Iq (typ) (mA) 0.7 Bandwidth at min gain (typ) (MHz) 1.3 Gain error (±) (max) (%) 0.65 Operating temperature range (°C) -55 to 125 Rating HiRel Enhanced Product Type Resistor Gain nonlinearity (±) (max) (%) 0.0055 Output swing headroom (to negative supply) (typ) (V) 0.8 Output swing headroom (to positive supply) (typ) (V) -0.9 Input common mode headroom (to negative supply) (typ) (V) 1.7 Input common mode headroom (to positive supply) (typ) (V) -1.4 Noise at 0.1 Hz to 10 Hz (typ) (µVPP) 0.2
Number of channels 1 Vs (max) (V) 36 Vs (min) (V) 4.5 Input offset (±) (max) (µV) 100 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 10000 Noise at 1 kHz (typ) (nV√Hz) 8 Features Current Feedback, Overvoltage protection CMRR (min) (dB) 113 Input offset drift (±) (max) (µV/°C) 150 Input bias current (±) (max) (nA) 8 Iq (typ) (mA) 0.7 Bandwidth at min gain (typ) (MHz) 1.3 Gain error (±) (max) (%) 0.65 Operating temperature range (°C) -55 to 125 Rating HiRel Enhanced Product Type Resistor Gain nonlinearity (±) (max) (%) 0.0055 Output swing headroom (to negative supply) (typ) (V) 0.8 Output swing headroom (to positive supply) (typ) (V) -0.9 Input common mode headroom (to negative supply) (typ) (V) 1.7 Input common mode headroom (to positive supply) (typ) (V) -1.4 Noise at 0.1 Hz to 10 Hz (typ) (µVPP) 0.2
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Low Offset Voltage
  • Low Input Bias Current
  • High CMR: 95 dB (Typical)
  • Inputs Protected to ±40 V
  • Wide Supply Range: ±2.25 V to ±18 V
  • Low Quiescent Current: 2 mA (Typical)
  • APPLICATIONS
    • Bridge Amplifier
    • Thermocouple Amplifier
    • RTD Sensor Amplifier
    • Medical Instrumentation
    • Data Acquisition
    • Supports Extreme Temperature Applications:
      • Controlled Baseline
      • One Assembly and Test Site
      • One Fabrication Site
      • Available in Military (–55°C to +125°C)
        Temperature Range(1)
      • Extended Product Life Cycle
      • Extended Product-Change Notification
      • Product Traceability

(1) Custom temperature ranges available
All other trademarks are the property of their respective owners
  • Low Offset Voltage
  • Low Input Bias Current
  • High CMR: 95 dB (Typical)
  • Inputs Protected to ±40 V
  • Wide Supply Range: ±2.25 V to ±18 V
  • Low Quiescent Current: 2 mA (Typical)
  • APPLICATIONS
    • Bridge Amplifier
    • Thermocouple Amplifier
    • RTD Sensor Amplifier
    • Medical Instrumentation
    • Data Acquisition
    • Supports Extreme Temperature Applications:
      • Controlled Baseline
      • One Assembly and Test Site
      • One Fabrication Site
      • Available in Military (–55°C to +125°C)
        Temperature Range(1)
      • Extended Product Life Cycle
      • Extended Product-Change Notification
      • Product Traceability

(1) Custom temperature ranges available
All other trademarks are the property of their respective owners

The INA129-EP device is a low power, general-purpose instrumentation amplifier offering excellent accuracy. The versatile 3-op amp design and small size make the device ideal for a wide range of applications. Current-feedback input circuitry provides wide bandwidth even at high gain (200 kHz at G = 100).

A single external resistor sets any gain from 1 to 10,000. The INA129-EP provides an industry-standard gain equation; the INA129-EP gain equation is compatible with the AD620.

The INA129-EP device is laser trimmed for very low offset voltage, drift, and high common-mode rejection (113 dB at G ≥ 100). It operates with power supplies as low as ±2.25 V, and quiescent current is only 750 µA–ideal for battery operated systems. Internal input protection can withstand up to ±40 V without damage.

The INA129-EP is available in a 8-Pin SOIC surface-mount package specified for the –55°C to 125°C temperature range.

The INA129-EP device is a low power, general-purpose instrumentation amplifier offering excellent accuracy. The versatile 3-op amp design and small size make the device ideal for a wide range of applications. Current-feedback input circuitry provides wide bandwidth even at high gain (200 kHz at G = 100).

A single external resistor sets any gain from 1 to 10,000. The INA129-EP provides an industry-standard gain equation; the INA129-EP gain equation is compatible with the AD620.

The INA129-EP device is laser trimmed for very low offset voltage, drift, and high common-mode rejection (113 dB at G ≥ 100). It operates with power supplies as low as ±2.25 V, and quiescent current is only 750 µA–ideal for battery operated systems. Internal input protection can withstand up to ±40 V without damage.

The INA129-EP is available in a 8-Pin SOIC surface-mount package specified for the –55°C to 125°C temperature range.
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種類 タイトル 最新の英語版をダウンロード 日付
* データシート INA129-EP Precision, Low Power Instrumentation Amplifiers データシート (Rev. A) PDF | HTML 2015年 12月 23日
* 放射線と信頼性レポート INA129MDREP Reliability Report 2012年 6月 4日

購入と品質

記載されている情報：
  • RoHS
  • REACH
  • デバイスのマーキング
  • リード端子の仕上げ / ボールの原材料
  • MSL 定格 / ピーク リフロー
  • MTBF/FIT 推定値
  • 使用原材料
  • 認定試験結果
  • 継続的な信頼性モニタ試験結果
記載されている情報：
  • ファブの拠点
  • 組み立てを実施した拠点

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