over operating free-air temperature range (unless otherwise noted)(1)(2)
|
MIN |
MAX |
UNIT |
VDS |
Drain-to-source voltage |
–40 |
40 |
V |
VGS, VGD |
Gate-to-source voltage, gate-to-drain voltage |
–40 |
0.1 |
V |
VVCH |
Voltage between VCH to D, G, or S |
|
40 |
V |
VVCL |
Voltage between VCL to D, G, or S |
–40 |
|
|
IVCL, IVCH |
Clamp diode current |
DC |
|
20 |
mA |
50-ms pulse(3) |
|
200 |
IDS |
Drain-to-source current |
–50 |
50 |
mA |
IGS, IGD |
Gate-to-source current, gate-to-drain current |
–20 |
20 |
mA |
TA |
Ambient temperature |
–55 |
150 |
°C |
TJ |
Junction temperature |
–55 |
150 |
°C |
Tstg |
Storage temperature |
–55 |
175 |
°C |
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) All gate, drain and source voltages are referred to the same-channel JFET (that is, VGS applies to both VG1S1 and VG2S2).
(3) Maximum diode current pulse specified for 50 ms at 1% duty cycle.