SNVS454E August   2006  – December 2014 LM2830 , LM2830-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings: LM2830
    3. 6.3 ESD Ratings: LM2830-Q1
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Soft-Start
      2. 7.3.2 Output Overvoltage Protection
      3. 7.3.3 Undervoltage Lockout
      4. 7.3.4 Current Limit
      5. 7.3.5 Thermal Shutdown
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 LM2830X Design Vo = 1.2 V at 1.0A
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Inductor Selection
          2. 8.2.1.2.2 Input Capacitor
          3. 8.2.1.2.3 Output Capacitor
          4. 8.2.1.2.4 Catch Diode
          5. 8.2.1.2.5 Output Voltage
          6. 8.2.1.2.6 Calculating Efficiency, and Junction Temperature
        3. 8.2.1.3 Application Curves
      2. 8.2.2 LM2830X Design Vo = 0.6 V at 1.0-A
      3. 8.2.3 LM2830X Design Vo = 3.3 V at 1.0-A
      4. 8.2.4 LM2830Z Design Vo = 3.3 V at 1.0-A
      5. 8.2.5 LM2830Z Design Vo = 1.2 V at 1.0-A
      6. 8.2.6 LM2830X Dual Converters With Delayed Enabled Design
      7. 8.2.7 LM2830X Buck Converter and Voltage Double Circuit With LDO Follower
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
    4. 10.4 WSON Package
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Thermal Definitions
    2. 11.2 Related Links
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ

11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.1.2 Thermal Definitions

    TJChip junction temperature
    TAAmbient temperature
    RθJCThermal resistance from chip junction to device case
    RθJAThermal resistance from chip junction to ambient air

Heat in the LM2830 device due to internal power dissipation is removed through conduction and/or convection.

    Conduction:Heat transfer occurs through cross sectional areas of material. Depending on the material, the transfer of heat can be considered to have poor to good thermal conductivity properties (insulator vs. conductor).

Heat Transfer goes as:

Silicon → package → lead frame → PCB

    Convection:Heat transfer is by means of airflow. This could be from a fan or natural convection. Natural convection occurs when air currents rise from the hot device to cooler air.

Thermal impedance is defined as:

Equation 39. 20197473.gif

Thermal impedance from the silicon junction to the ambient air is defined as:

Equation 40. 20197474.gif

11.2 Related Links

The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy.

Table 9. Related Links

PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY
LM2830 Click here Click here Click here Click here Click here
LM2830-Q1 Click here Click here Click here Click here Click here

11.3 Trademarks

All other trademarks are the property of their respective owners.

11.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.