JAJSH28D November   2013  – March 2019 LM3697

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
      2.      昇圧効率
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
      1. 7.1.1 PWM Input
      2. 7.1.2 HWEN Input
      3. 7.1.3 Thermal Shutdown
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Descriptions
      1. 7.3.1 High-Voltage LED Control
        1. 7.3.1.1 High-Voltage Boost Converter
        2. 7.3.1.2 High-Voltage Current Sinks (HVLED1, HVLED2 and HVLED3)
        3. 7.3.1.3 High-Voltage Current String Biasing
      2. 7.3.2 Boost Switching-Frequency Select
      3. 7.3.3 Automatic Switching Frequency Shift
      4. 7.3.4 Brightness Register Current Control
        1. 7.3.4.1 8-Bit Control (Preferred)
        2. 7.3.4.2 11-Bit Control
      5. 7.3.5 PWM Control
        1. 7.3.5.1 PWM Input Frequency Range
        2. 7.3.5.2 PWM Input Polarity
        3. 7.3.5.3 PWM Zero Detection
      6. 7.3.6 Start-up/Shutdown Ramp
      7. 7.3.7 Run-Time Ramp
      8. 7.3.8 High-Voltage Control A and B Ramp Select
    4. 7.4 Device Functional Modes
      1. 7.4.1 LED Current Mapping Modes
        1. 7.4.1.1 Exponential Mapping
          1. 7.4.1.1.1 8-Bit Code Calculation
          2. 7.4.1.1.2 11-Bit Code Calculation
        2. 7.4.1.2 Linear Mapping
          1. 7.4.1.2.1 8-Bit Code Calculation
          2. 7.4.1.2.2 11-Bit Code Calculation
      2. 7.4.2 Fault Flags/Protection Features
        1. 7.4.2.1 Open LED String (HVLED)
        2. 7.4.2.2 Shorted LED String (HVLED)
        3. 7.4.2.3 Overvoltage Protection (Inductive Boost)
        4. 7.4.2.4 Current Limit (Inductive Boost)
      3. 7.4.3 I2C-Compatible Interface
        1. 7.4.3.1 Start And Stop Conditions
        2. 7.4.3.2 I2C-Compatible Address
        3. 7.4.3.3 Transferring Data
        4. 7.4.3.4 High-Speed Mode
    5. 7.5 Register Maps
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Boost Converter Maximum Output Power
          1. 8.2.2.1.1 Peak Current Limited
          2. 8.2.2.1.2 Output Voltage Limited
        2. 8.2.2.2 Inductor Selection
        3. 8.2.2.3 Output Capacitor Selection
        4. 8.2.2.4 Schottky Diode Selection
        5. 8.2.2.5 Input Capacitor Selection
        6. 8.2.2.6 Application Circuit Component List
      3. 8.2.3 Application Performance Plots
    3. 8.3 Initialization Set Up
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Boost Output Capacitor Placement
      2. 10.1.2 Schottky Diode Placement
      3. 10.1.3 Inductor Placement
      4. 10.1.4 Boost Input Capacitor Placement
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 11.2 関連資料
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 コミュニティ・リソース
    5. 11.5 商標
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • YFQ|12
サーマルパッド・メカニカル・データ
発注情報

10.1.1 Boost Output Capacitor Placement

Because the output capacitor is in the path of the inductor current discharge path it detects a high-current step from 0 to IPEAK each time the switch turns off and the Schottky diode turns on. Any inductance along this series path from the cathode of the diode through COUT and back into the LM3697 device's GND pin contributes to voltage spikes (VSPIKE = LP_ × di/dt) at SW and OUT. These spikes can potentially over-voltage the SW pin, or feed through to GND. To avoid this, COUT+ must be connected as close as possible to the cathode of the Schottky diode, and COUT− must be connected as close as possible to the LM3697 device's GND bump. The best placement for COUT is on the same layer as the LM3697 in order to avoid any vias that can add excessive series inductance.