SNAS470E October   2008  – November 2015 LM48100Q-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics for VDD = 5 V
    6. 6.6  Electrical Characteristics for VDD = 5 V at Extended Temperature Limits
    7. 6.7  Electrical Characteristics for VDD = 3.6 V
    8. 6.8  Electrical Characteristics for VDD = 3.6 V at Extended Temperature Limits
    9. 6.9  I2C Interface Characteristics for VDD = 5 V, 2.2 V ≤ I2C VDD ≤ 5.5 V
    10. 6.10 I2C Interface Characteristics for VDD = 5 V, 1.8 V ≤ I2C VDD ≤ 2.2 V
    11. 6.11 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Diagnostic Control
      2. 7.3.2 Fault Detection Control Register
      3. 7.3.3 General Amplifier Function
        1. 7.3.3.1 Bridge Configuration Explained
        2. 7.3.3.2 Input Mixer/Multiplexer
      4. 7.3.4 Output Fault Detection
        1. 7.3.4.1 Output Short to Supplies (VDD or GND)
        2. 7.3.4.2 Output Short Circuit and Open Circuit Detection
        3. 7.3.4.3 Output Over-Current Detection
        4. 7.3.4.4 Thermal Overload Detection
      5. 7.3.5 Open FAULT Output
      6. 7.3.6 Volume Control
      7. 7.3.7 Shutdown Function
      8. 7.3.8 Power Dissipation
    4. 7.4 Device Functional Modes
      1. 7.4.1 One-Shot Mode
      2. 7.4.2 Continuous Diagnostic Mode
    5. 7.5 Programming
      1. 7.5.1 Write-Only I2C Compatible Interface
      2. 7.5.2 I2C Bus Format
    6. 7.6 Register Maps
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Power Supply Bypassing/Filtering
        2. 8.2.2.2 Input Capacitor Selection
        3. 8.2.2.3 Bias Capacitor Selection
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Exposed DAP Mounting Considerations
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.2 Trademarks

PowerPAD, E2E are trademarks of Texas Instruments.

All other trademarks are the property of their respective owners.

11.3 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.