SNOSCZ1B July   2015  – June 2016 LM74610-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 During T0
      2. 7.3.2 During T1
      3. 7.3.3 Pin Operation
        1. 7.3.3.1 Anode and Cathode Pins
        2. 7.3.3.2 VcapH and VcapL Pins
        3. 7.3.3.3 Gate Drive Pin
        4. 7.3.3.4 Gate Pull Down Pin
    4. 7.4 Device Functional Modes
      1. 7.4.1 Duty Cycle Calculation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Design Considerations
        2. 8.2.2.2 Startup Voltage
        3. 8.2.2.3 Capacitor Selection
        4. 8.2.2.4 MOSFET Selection
      3. 8.2.3 Application Curves
      4. 8.2.4 Selection of TVS Diodes in Automotive Reverse Polarity Applications
      5. 8.2.5 OR-ing Application Configuration
      6. 8.2.6 Design Requirements
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Exceeds HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Maximum reverse voltage of 45 V
  • No Positive Voltage limitation to Anode Terminal
  • Charge Pump Gate Driver for External N-Channel MOSFET
  • Lower Power Dissipation than Schottky Diode/PFET Solutions
  • Low Reverse Leakage Current
  • Zero IQ
  • Fast 2-µs Response to Reverse Polarity
  • -40°C to +125°C Operating Ambient Temperature
  • Can be Used in OR-ing Applications
  • Meets CISPR25 EMI Specification
  • Meets Automotive ISO7637 Transient Requirements with a Suitable TVS Diode
  • No Peak Current Limit

2 Applications

  • ADAS
  • Infotainment Systems
  • Power Tools (Industrial)
  • Transmission Control Unit (TCU)
  • Battery OR-ing Applications

3 Description

The LM74610-Q1 is a controller device that can be used with an N-Channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq.

The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
LM74610-Q1 VSSOP (8) 3.00 mm x 5.00 mm
  1. For all available packages, see the orderable addendum at the end of the datasheet.

Smart Diode Configuration

LM74610-Q1 simplified_schematic_snoscz1.gif

Application Diagram

LM74610-Q1 simplifiedappdiagram_snoscz1.gif