JAJSJ94B September   2021  – August 2022 LM74722-Q1

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Dual Gate Control (GATE, PD)
        1. 8.3.1.1 Reverse Battery Protection (A, C, GATE)
        2. 8.3.1.2 Load Disconnect Switch Control (PD)
        3. 8.3.1.3 Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
      2. 8.3.2 Boost Regulator
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical 12-V Reverse Battery Protection Application
      1. 9.2.1 Design Requirements for 12-V Battery Protection
        1. 9.2.1.1 Automotive Reverse Battery Protection
          1. 9.2.1.1.1 Input Transient Protection: ISO 7637-2 Pulse 1
          2. 9.2.1.1.2 AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
          3. 9.2.1.1.3 Input Micro-Short Protection: LV124 E-10
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Considerations
        2. 9.2.2.2 Boost Converter Components (C2, C3, L1)
        3. 9.2.2.3 Input and Output Capacitance
        4. 9.2.2.4 Hold-Up Capacitance
        5. 9.2.2.5 Overvoltage Protection and Battery Monitor
        6. 9.2.2.6 MOSFET Selection: Blocking MOSFET Q1
        7. 9.2.2.7 MOSFET Selection: Load Disconnect MOSFET Q2
        8. 9.2.2.8 TVS Selection
      3. 9.2.3 Application Curves
    3. 9.3 What to Do and What Not to Do
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 TVS Selection for 12-V Battery Systems
    3. 10.3 TVS Selection for 24-V Battery Systems
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 サポート・リソース
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5 Pin Configuration and Functions

GUID-C030A796-6798-4EC9-9B0B-D367989E1231-low.gifFigure 5-1 WSON12-Pin DRRTransparent Top View
Table 5-1 Pin Functions
PINTYPEDESCRIPTION
NAMELM74722-Q1
DRR-12 (WSON)
GATE1ODiode controller gate drive output. Connect to the GATE of the external MOSFET.
A2IAnode of the ideal diode. Connect to the source of the external MOSFET.
VSNS3IVoltage sensing input
SW4IVoltage sensing disconnect switch terminal. VSNS and SW connect internally through a switch. Use SW as the top connection of the battery sensing or OV resistor ladder network. When EN is pulled low, the switch is OFF disconnecting the resistor ladder from the battery line, thereby cutting off the leakage current. If the internal disconnect switch between VSNS and SW is not used, then short them together and connect to C pin.
OV5IAdjustable overvoltage threshold input. Connect a resistor ladder across SW to OV terminal. When the voltage at OV exceeds the over voltage cut-off threshold, then the PD is pulled low turning OFF the HSFET. PD is driven high when the sense voltage goes below the OV falling threshold.
EN6IEN input. Connect to A or C pin for always ON operation. In this mode, the device consumes an IQ of 35 µA (maximum) that can be driven externally from a micro controller I/O. Pulling this pin low below 0.3 V enters the device in low Iq shutdown mode.
GND7GConnect to the system ground plane.
PD8OPull down connection for the external HSFET. Connect to the GATE of the external FET. Keep PD pin floating when not used.
N.C9INo connect
LX10ISwitch node of the internal boost regulator. This node must be kept small on the PCB for good performance and low EMI. Connect the boost inductor between this pin and the DRAIN connection of the external FET.
CAP11OBoost regulator output. This pin is used to provide a drive voltage to the gate driver of the ideal diode stage as well as drive supply for the HSFET. Connect a 1-µF capacitor between this pin and the DRAIN connection of the external FET.
C12ICathode of the ideal diode and supply voltage pin. Connect to the DRAIN of the external MOSFET. The voltage sensed at this pin is used to control the external MOSFET GATE. This pin must be locally bypassed with at least 1 µF.
RTNThermal Pad—Leave exposed pad floating. Do not connect to GND plane.