JAJSM84B december   2022  – july 2023 LM74900-Q1 , LM74910-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 スイッチング特性
    7. 7.7 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Charge Pump
      2. 9.3.2 Dual Gate Control (DGATE, HGATE)
        1. 9.3.2.1 Reverse Battery Protection (A, C, DGATE)
        2. 9.3.2.2 Load Disconnect Switch Control (HGATE, OUT)
      3. 9.3.3 Overcurrent Protection (CS+, CS-, ILIM, IMON, TMR)
        1. 9.3.3.1 Pulse Overload Protection, Circuit Breaker
        2. 9.3.3.2 Overcurrent Protection With Latch-Off
        3. 9.3.3.3 Short Circuit Protection (ISCP)
        4. 9.3.3.4 Analog Current Monitor Output (IMON)
      4. 9.3.4 Undervoltage Protection, Overvoltage Protection, and Battery Voltage Sensing (UVLO, OV, SW)
      5. 9.3.5 Low IQ SLEEP Mode (SLEEP)
      6. 9.3.6 Ultra Low IQ Shutdown (EN)
  11. 10Applications and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical 12-V Reverse Battery Protection Application
      1. 10.2.1 Design Requirements for 12-V Battery Protection
      2. 10.2.2 Automotive Reverse Battery Protection
        1. 10.2.2.1 Input Transient Protection: ISO 7637-2 Pulse 1
        2. 10.2.2.2 AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
        3. 10.2.2.3 Input Micro-Short Protection: LV124 E-10
      3. 10.2.3 Detailed Design Procedure
        1. 10.2.3.1 Design Considerations
        2. 10.2.3.2 Charge Pump Capacitance VCAP
        3. 10.2.3.3 Input and Output Capacitance
        4. 10.2.3.4 Hold-Up Capacitance
        5. 10.2.3.5 Selection of Current Sense Resistor, RSNS
        6. 10.2.3.6 Selection of Scaling Resistor (RSET) and Short-Circuit Protection Setting Resistor (RSCP)
        7. 10.2.3.7 Overcurrent Limit (ILIM), Circuit Breaker Timer (TMR), and Current Monitoring Output (IMON) Selection
        8. 10.2.3.8 Overvoltage Protection and Battery Monitor
      4. 10.2.4 MOSFET Selection: Blocking MOSFET Q1
      5. 10.2.5 MOSFET Selection: Hot-Swap MOSFET Q2
      6. 10.2.6 TVS Selection
      7. 10.2.7 Application Curves
    3. 10.3 Addressing Automotive Input Reverse Battery Protection Topologies With LM749x0-Q1
    4. 10.4 Power Supply Recommendations
      1. 10.4.1 Transient Protection
      2. 10.4.2 TVS Selection for 12-V Battery Systems
    5. 10.5 Layout
      1. 10.5.1 Layout Guidelines
  12. 11Device and Documentation Support
    1. 11.1 ドキュメントの更新通知を受け取る方法
    2. 11.2 サポート・リソース
    3. 11.3 Trademarks
    4. 11.4 静電気放電に関する注意事項
    5. 11.5 用語集
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

10.3 Addressing Automotive Input Reverse Battery Protection Topologies With LM749x0-Q1

The LM749x0-Q1 dual gate drive architecture can address various MOSFET control topologies such as ideal diode FET only, high-side switch controller only, dual OR-ing with load disconnect, and priority power muxing. This enables system designers to use LM749x0-Q1 as a plug and place component to meet various automotive front end protection solutions with a common controller. For additional details on overview of different automotive reverse battery protection topologies that can be addressed using LM749x0-Q1, refer to Addressing Automotive Reverse Battery Protection Toplogies using LM749x0-Q1.