SNOS515F October   2000  – August 2015 LM8272

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Pin Configuration and Functions
  6. 6Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 5V Electrical Characteristics
    6. 6.6 12V Electrical Characteristics
    7. 6.7 Typical Performance Characteristics
  7. 7Application and Implementation
    1. 7.1 Block Diagram and Operational Description A) Input Stage:
    2. 7.2 B) Output Stage:
    3. 7.3 C) Output Voltage Swing Close to V−:
    4. 7.4 Driving Capactive Loads:
    5. 7.5 Estimating the Output Voltage Swing
    6. 7.6 Output Short Circuit Current and Dissipation Issues:
    7. 7.7 Other Application Hints:
    8. 7.8 LM8272 Advantages:
  8. 8Device and Documentation Support
    1. 8.1 Community Resources
    2. 8.2 Trademarks
    3. 8.3 Electrostatic Discharge Caution
    4. 8.4 Glossary
  9. 9Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8 Device and Documentation Support

8.1 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

8.2 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

8.3 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

8.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.