SNOS875H January   2000  – December 2024 LMC6035 , LMC6036

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information: LMC6035
    5. 5.5 Thermal Information: LMC6036
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Capacitive Load Tolerance
    2. 7.2 Typical Applications
      1. 7.2.1 Differential Driver
      2. 7.2.2 Low-Pass Active Filter
        1. 7.2.2.1 Low-Pass Frequency Scaling Procedure
      3. 7.2.3 High-Pass Active Filter
        1. 7.2.3.1 High-Pass Frequency Scaling Procedure
      4. 7.2.4 Dual-Amplifier Bandpass Filter
        1. 7.2.4.1 DABP Component Selection Procedure
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
        1. 7.3.1.1 Printed Circuit Board (PCB) Layout for High-Impedance Work
        2. 7.3.1.2 DSBGA Considerations
      2. 7.3.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3.     Trademarks
    4. 8.3 Electrostatic Discharge Caution
    5. 8.4 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

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発注情報

8.3 Electrostatic Discharge Caution

LMC6035 LMC6036 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.