JAJSIG5C May   2019  – December 2024 LMG1025-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stage
      2. 6.3.2 Output Stage
      3. 6.3.3 Bias Supply and Under Voltage Lockout
      4. 6.3.4 Overtemperature Protection (OTP)
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Handling Ground Bounce
        2. 7.2.2.2 Creating Nanosecond Pulse
        3. 7.2.2.3 VDD and Overshoot
        4. 7.2.2.4 Operating at Higher Frequency
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Gate Drive Loop Inductance and Ground Connection
      2. 9.1.2 Bypass Capacitor
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 サード・パーティ製品に関する免責事項
    2. 10.2 ドキュメントの更新通知を受け取る方法
    3. 10.3 サポート・リソース
    4. 10.4 静電気放電に関する注意事項
    5. 10.5 Trademarks
    6. 10.6 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

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5.5 Electrical Characteristics

VDD = 5V, good feed-through bypass capacitor from VDD to GND pin, over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
DC Characteristics
IVDD, QVDD Quiescent CurrentIN+ = IN- = 0 V75µA
IVDD, opVDD Operating Currentfsw = 30 MHz, no load, 2Ω as ROUTH and ROUTL40mA
fsw = 30 MHz, 100-pF load, 2Ω as ROUTH and ROUTL51mA
VDD, UVLOUnder-voltage LockoutVDD rising4.04.35V
ΔVDD, UVLOUVLO Hysteresis85mV
TOTPOver temperature shutdown, turn-off threshold170°C
ΔTOTPOver temperature hysteresis20°C
Input DC Characteristics
VIHIN+, IN- high threshold1.72.6V
VILIN+, IN- low threshold1.11.8V
VHYSTIN+, IN- hysteresis0.381V
RIN+Positive input pull-down resistanceTo GND100150250kΩ
RIN-Negative input pull-up resistanceto VDD100150250kΩ
CIN+Positive input pin capacitanceTo GND1.45pF
CIN-Negative input pin capacitanceTo GND1.45pF
Output DC Characteristics
VOLOUTL voltageIOUTL = 100 mA, IN+= IN- = 0 V45mV
VDD-VOHOUTH voltageIOUTH = 100 mA, IN+= 5 V, IN- = 0 V, VDD = 5 V52mV
IOHPeak source currentVOUTH = 0 V, IN+= 5 V, IN- = 0 V, VDD = 5 V7A
IOLPeak sink currentVOUTL = 5 V, IN+= IN- = 0 V, VDD = 5 V5A