JAJSIG5C May   2019  – December 2024 LMG1025-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stage
      2. 6.3.2 Output Stage
      3. 6.3.3 Bias Supply and Under Voltage Lockout
      4. 6.3.4 Overtemperature Protection (OTP)
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Handling Ground Bounce
        2. 7.2.2.2 Creating Nanosecond Pulse
        3. 7.2.2.3 VDD and Overshoot
        4. 7.2.2.4 Operating at Higher Frequency
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Gate Drive Loop Inductance and Ground Connection
      2. 9.1.2 Bypass Capacitor
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 サード・パーティ製品に関する免責事項
    2. 10.2 ドキュメントの更新通知を受け取る方法
    3. 10.3 サポート・リソース
    4. 10.4 静電気放電に関する注意事項
    5. 10.5 Trademarks
    6. 10.6 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

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7.2.3 Application Curves

LMG1025-Q1 EVM is used to take application waveforms. This EVM has LDO, input buffer, GaN FET, and load resistor. It shows the switching performance of the LMG1025-Q1 when equivalent laser diode current is switched. Figure 7-6 and Figure 7-7 show VDD turn-on and turn-off delay in an application-like set-up. System designer need to make sure that these delays are acceptable in their designs. LIDAR design needs to pulse the laser diode for very short duration. Figure 7-8 shows how LMG1025-Q1 can not only handle nano-second pulse at its input but also can produce a nano-second pulse at the output while driving a reasonably sized GaN FET that has 3.2nC of typical total gate charge. Figure 7-8 also shows very small, e.g. less than 3 ns, rising and falling propagation delay of LMG1025-Q1. Figure 7-9 shows drive strength of LMG1025-Q1. It shows how LMG1025-Q1 can achieve sub-nano second rise and fall time, which is very important for LIDAR applicatoins.

LMG1025-Q1 Startup TimeFigure 7-6 Startup Time
LMG1025-Q1 Input Pulse Width and Propagation DelaysFigure 7-8 Input Pulse Width and Propagation Delays
LMG1025-Q1 Shutdown TimeFigure 7-7 Shutdown Time
LMG1025-Q1 Rise and Fall TimeFigure 7-9 Rise and Fall Time