JAJSRX4 May 2024 LMG2650
ADVANCE INFORMATION
PIN | TYPE(1) | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
NC | 1, 6, 9, 11 | NC | Used to anchor QFN package to PCB. Pin must be soldered to a PCB landing pad. The PCB landing pad is non-solder mask defined pad and must not be physically connected to any other metal on the PCB. Pin not connected internally. |
INH | 2 | I | High-side gate-drive control input. Referenced to AGND. Signal is level shifted internally to the high-side GaN FET driver. There is a forward biased ESD diode from INH to AUX so avoid driving INH higher than AUX. Short this pin to AGND if GDH pin function is used. |
INL | 3 | I | Low-side gate-drive control input. Referenced to AGND. There is a forward biased ESD diode from INL to AUX so avoid driving INL higher than AUX. |
CS | 4 | O | Current-sense emulation output. Outputs scaled replica of the GaN FET current. Feed output current into a resistor to create a current sense voltage signal. Reference the resistor to the power supply controller IC local ground. This function replaces the external current sense resistor that is used in series with the low-side FET source. |
SL | 5, 7 | P | Low-side GaN FET source. Low-side thermal pad. Internally connected to AGND. |
DH | 8 | P | High-side GaN FET drain. |
SW | 10, 15 | P | GaN FET half-bridge switch node between the high-side GaN FET source and low-side GaN FET drain. High-side thermal pad. |
GDH | 12 | I | High-side gate-drive control input. Referenced to SW. Signal is connected directly to the high-side GaN FET driver. There is a forward biased ESD diode from GDH to BST so avoid driving GDH higher than BST. Short this pin to SW if INH pin function is used. |
RDRVH | 13 | I | High-side drive strength control resistor. Set a resistance between RDRVH and SW to program the high-side GaN FET turn-on slew rate. |
BST | 14 | P | Bootstrap voltage rail. High-side supply voltage. The bootstrap diode function between AUX and BST is internally provided. Connect an appropriately sized bootstrap capacitor between BST and SW. |
RDRVL | 16 | I | Low-side drive strength control resistor. Set a resistance between RDRVL and AGND to program the low-side GaN FET turn-on slew rate. |
AGND | 17 | G | Low-side analog ground. Internally connected to SL. |
AUX | 18 | P | Auxiliary voltage rail. Low-side supply voltage. Connect a local bypass capacitor between AUX and AGND. |
EN | 19 | I | Enable. Used to toggle between active and standby modes. The standby mode has reduced quiescent current to support converter light load efficiency targets. There is a forward biased ESD diode from EN to AUX so avoid driving EN higher than AUX. |