JAJSSU3A January   2024  – July 2024 LMG3100R017

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay and Mismatch Measurement
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Control Inputs
      2. 7.3.2 Start-up and UVLO
      3. 7.3.3 Bootstrap Supply Voltage Clamping
      4. 7.3.4 Level Shift
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VCC Bypass Capacitor
        2. 8.2.2.2 Bootstrap Capacitor
        3. 8.2.2.3 Slew Rate Control
        4. 8.2.2.4 Use With Analog Controllers
        5. 8.2.2.5 Power Dissipation
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 ドキュメントの更新通知を受け取る方法
    3. 9.3 サポート・リソース
    4. 9.4 Trademarks
    5. 9.5 静電気放電に関する注意事項
    6. 9.6 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Information

パッケージ・オプション

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メカニカル・データ（パッケージ｜ピン）
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発注情報

5.5 Electrical Characteristics

Unless otherwise noted, voltages are with respect to AGND; -40℃ ≤ TJ ≤125℃(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER STAGE R017
RDS(ON) GaN FET on-resistance LI=VCC=5V, HI=0V, I(DRN-SRC)=45A, TJ = 25℃ 1.7 2.2 mΩ
VSD GaN 3rd quadrant conduction drop ISD = 500 mA, VVCC = 5 V, HI = LI = 0V 1.5 V
IL-DRN-SRC Leakage from DRN to SRC when the GaN FET is off DRN = 80V, HI = LI = 0V, VVCC = 5V, TJ=25℃ 12 200 µA
COSS Output Capacitance of GaN FET VDS=50V, VGS= 0V (HI = LI = 0V) 1035 1423 pF
COSS(ER) Output Capacitance of GaN FET - Energy Related VDS=0 to 50V, VGS= 0V (HI = LI = 0V) 1223 pF
COSS(TR) Output Capacitance of GaN FET - Time Related VDS=0 to 50V, VGS= 0V (HI = LI = 0V) 1547 pF
QG Total Gate Charge of GaN FET VDS=50V, ID= 45A, VGS= 5V 20 29 nC
QGD Gate to Drain Charge of GaN FET VDS=50V, ID= 45A 2 nC
QGS Gate to Source Charge of GaN FET VDS=50V, ID= 45A 6.7 nC
QOSS Output Charge  VDS=50V, VGS = 0 V 77 104 nC
QRR Source to Drain Reverse Recovery Charge Not including internal driver bootstrap diode 0 nC
tHIPLH Propagation delay: HI Rising(2) LI=0V, VCC=5V, HB-HS=5V, VIN=48V 38 70 120 ns
tHIPHL Propagation delay: HI Falling(2) LI=0V, VCC=5V, HB-HS=5V, VIN=48V 38 70 120 ns
tLIPLH Propagation delay: LI Rising(2) HI=0V, VCC=5V, HB-HS=5V, VIN=48V 19 40 65 ns
tLIPHL Propagation delay: LI Falling(2) HI=0V, VCC=5V, HB-HS=5V, VIN=48V 19 40 65 ns
tMON Delay Matching: LI high & HI low(2) 4 30 55 ns
tMOFF Delay Matching: LI low & HI high(2) 4 30 55 ns
tPW Minimum Input Pulse Width that Changes the Output 10 ns
INPUT PINS HI, LI
VIH High-Level Input Voltage Threshold Rising Edge 1.87 2.06 2.22 V
VIL Low-Level Input Voltage Threshold Falling Edge 1.48 1.66 1.76 V
VHYS Hysteresis between rising and falling threshold 350 mV
RI Input pull down resistance 100 200 300 kΩ
OUTPUT PIN HO
VOL Low level output voltage IOL = 10 mA 0.03 V
VOH High level output voltage IOL = -10 mA VHB-0.06 V
UNDER VOLTAGE PROTECTION
VCCR VCC Rising edge threshold Rising 3.2 3.8 4.5 V
VCCF VCC Falling edge threshold 3.0 3.6 4.3 V
VCC(hyst) VCC UVLO threshold hysteresis 210 mV
VHBR HB Rising edge threshold Rising 2.5 3.2 3.9 V
VHBF HB Falling edge threshold 2.3 3.0 3.7 V
VHB(hyst) HB UVLO threshold hysteresis 220 mV
BOOTSTRAP DIODE
VDL Low-Current forward voltage IVDD-HB = 100µA 0.45 0.65 V
VDH High current forward voltage IVDD-HB = 100mA 0.9 1.2 V
RD Dynamic Resistance IVDD-HB = 100mA 1.85 Ω
HB-HS Clamp Regulation Voltage 4.65 5 5.2 V
tBS Bootstrap diode reverse recovery time IF = 100 mA, IR = 100 mA 40 ns
QRR Bootstrap diode reverse recovery charge VVIN = 50 V 2 nC
SUPPLY CURRENTS
ICC VCC Quiescent Current LI = HI = 0V, VCC = 5V 0.08 0.125 mA
ICC VCC Quiescent Current LI=VCC=5V, HI=0V, LMG3100R017 0.17 5 mA
ICCO Total VCC Operating Current f = 500 kHz, 50% Duty cycle, VIN = 48V, LMG3100R017 10 20 mA
IHB HB Quiescent Current LI = HI = 0V, VCC = 5V, HB-HS = 4.6V 0.1 0.150 mA
IHB HB Quiescent Current LI=0V, HI=VCC=5V, HB-HS=4.6V, VIN=48V, LMG3100R017 0.16 0.25 mA
IHBO HB Operating Current f = 500 kHz, 50% Duty cycle, VDD = 5V, VIN = 48V, for low side device in half-bridge configuration,  LMG3100R017, HB-HS = 4.6V (supplied externally) 1.5 2.5 mA
(1) Parameters that show only a typical value are determined by design and may not be tested in production
(2) See Propagation Delay and Mismatch Measurement section