The LMG3612 is an integrated 650-V 120-mΩ GaN power FET intended for use in switching-power converters. The LMG3612 combines the GaN FET, gate driver, and protection features in a 8-mm by 5.3-mm QFN package.

The 650-V rated GaN FET supports the high voltages encountered in off-line power switching applications. The GaN FET low output-capacitive charge reduces both the time and energy needed for power converter switching and is the key characteristic needed to create small, efficient power converters.

The LMG3612 internal gate driver regulates the drive voltage for optimum GaN FET on-resistance. The internal driver reduces total gate inductance and GaN FET common-source inductance for improved switching performance, including common-mode transient immunity (CMTI). The GaN FET turn-on slew rate can be individually programmed to one of four discrete settings for design flexibility with respect to power loss, switching-induced ringing, and EMI.

The AUX input supply wide voltage range is compatible with the corresponding wide range supply rail created by power supply controllers. Low AUX quiescent currents support converter burst-mode operation critical for meeting government light-load efficiency mandates. Further AUX quiescent current reduction is obtained by placing the device in standby mode with the EN pin.

The IN control pin has high input impedance, low input threshold voltage and maximum input voltage equal to the AUX voltage. This allows the pin to support both low voltage and high voltage input signals and be driven with low-power outputs.

The LMG3612 protection features are under-voltage lockout (UVLO) and overtemperature protection. The overtemperature protection is reported on the open drain FLT output.