JAJSS46 November 2023 LMG3612
PRODUCTION DATA
The IN pin is used to turn the GaN power FET on and off.
The IN pin has a typical 1-V input-voltage-threshold hysteresis for noise immunity. The pin also has a typical 400-kΩ pull-down resistance to protect against floating inputs. The 400 kΩ saturates for nominal input voltages above 4 V to limit the maximum input pull-down current to a typical 10 µA.
The IN turn-on action is blocked by the following conditions:
The AUX UVLO and overtemperature protection are independent of the IN logic state. Figure 7-2 shows the IN independent blocking condition operation.