SNOSDL1 December   2024 LMG3650R035

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Switching Parameters
      1. 7.1.1 Turn-On Times
      2. 7.1.2 Turn-Off Times
      3. 7.1.3 Drain-Source Turn-On and Turn-off Slew Rate
      4. 7.1.4 Zero-Voltage Detection Times (LMG3656R035 only)
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
      1. 8.2.1 LMG3650R035 Functional Block Diagram
      2. 8.2.2 LMG3651R035 Functional Block Diagram
      3. 8.2.3 LMG3656R035 Functional Block Diagram
      4. 8.2.4 LMG3657R035 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Drive Strength Adjustment
      2. 8.3.2 VDD Supply
      3. 8.3.3 Overcurrent and Short-Circuit Protection
      4. 8.3.4 Overtemperature Protection
      5. 8.3.5 UVLO Protection
      6. 8.3.6 Fault Reporting
      7. 8.3.7 Auxiliary LDO (LMG3651R035 Only)
      8. 8.3.8 Zero-Voltage Detection (ZVD) (LMG3656R035 Only)
      9. 8.3.9 Zero-Current Detection (ZCD) (LMG3657R035 Only)
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Slew Rate Selection
        2. 9.2.2.2 Signal Level-Shifting
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Using an Isolated Power Supply
      2. 9.3.2 Using a Bootstrap Diode
        1. 9.3.2.1 Diode Selection
        2. 9.3.2.2 Managing the Bootstrap Voltage
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
  • KLA|9
サーマルパッド・メカニカル・データ
発注情報

9.2.2.1 Slew Rate Selection

The slew rate of LMG365xR035 can be adjusted between approximately 10 V/ns and 100V/ns by connecting drive strength adjustment circuit. Refer to Drive Strength Adjustment for the details.

The slew rate affects GaN device performance in terms of:

  • Switching loss
  • Voltage overshoot
  • Noise coupling
  • EMI emission

Generally, high slew rates provide low switching loss, but high slew rates can also create higher voltage overshoot, noise coupling, and EMI emissions. Following the design recommendations in this data sheet helps mitigate the challenges caused by a high slew rate. The LMG365xR035 offers circuit designers the flexibility to select the proper slew rate for the best performance of their applications.