JAJSDE7 June   2017 LMH6644-MIL

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     各種の電源における閉ループ・ゲインと周波数との関係
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 3-V Electrical Characteristics
    6. 7.6 5-V Electrical Characteristics
    7. 7.7 ±5-V Electrical Characteristics
    8. 7.8 Typical Performance Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Input and Output Topology
        2. 9.2.1.2 Single-Supply, Low-Power Photodiode Amplifier
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントの更新通知を受け取る方法
    2. 12.2 コミュニティ・リソース
    3. 12.3 商標
    4. 12.4 静電気放電に関する注意事項
    5. 12.5 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
  • Y|0
サーマルパッド・メカニカル・データ
発注情報

7.5 3-V Electrical Characteristics

Unless otherwise specified, all limits ensured for V+ = 3 V, V– = 0 V, VCM = VO = V+/2, VID (input differential voltage) as noted (where applicable) and RL = 2 kΩ to V+/2
PARAMETERTEST CONDITIONSAT
TEMPERATURE
EXTREMES		V+ = 3 V, V– = 0 V,
VCM = VO = V+/2, VID
RL = 2 kΩ to V+/2		UNIT
MINTYPMAXMIN(1)TYP(2)MAX(1)
BW –3-dB BW AV = +1, VOUT = 200mVPP 80 115 MHz
AV = +2, –1, VOUT = 200mVPP 46
BW0.1dB 0.1-dB gain flatness AV = +2, RL = 150Ω to V+/2,
Rf = 402Ω, VOUT = 200mVPP		 19 MHz
PBW Full power bandwidth AV = +1, –1dB, VOUT = 1VPP 40 MHz
en Input-referred voltage noise f = 100kHz 17 nV/√Hz
f = 1kHz 48
in Input-referred current noise f = 100kHz 0.90 pA/√Hz
f = 1kHz 3.3
THD Total harmonic distortion f = 5MHz, VO = 2VPP, AV = –1,
RL = 100Ω to V+/2		 –48 dBc
DG Differential gain VCM = 1V, NTSC, AV = +2
RL =150Ω to V+/2		 0.17%
RL =1kΩ to V+/2 0.03%
DP Differential phase VCM = 1V, NTSC, AV = +2
RL =150Ω to V+/2		 0.05 deg
RL =1kΩ to V+/2 0.03
CT Rej. Cross-talk rejection f = 5MHz, receiver:
Rf = Rg = 510Ω, AV = +2		 47 dB
TS Settling time VO = 2VPP, ±0.1%, 8pF Load,
VS = 5V		 68 ns
SR Slew rate (3) AV = –1, VI = 2VPP 90 120 V/µs
VOS Input offset voltage ±7 ±1 ±5 mV
TC VOS Input offset average drift See (4) ±5 µV/°C
IB Input bias current See (5) –3.25 –1.50 –2.60 µA
IOS Input offset current 1000 20 800 nA
RIN Common-mode input resistance 3 MΩ
CIN Common-mode input capacitance 2 pF
CMVR Input common-mode voltage range CMRR ≥ 50dB –0.1 –0.5 –0.2 V
1.6 1.8 2.0
CMRR Common-mode rejection ratio VCM Stepped from 0V to 1.5V 72 95 dB
AVOL Large signal voltage gain VO = 0.5V to 2.5V
RL = 2kΩ to V+/2		 75 80 96 dB
VO = 0.5V to 2.5V
RL = 150Ω to V+/2		 70 74 82
VO Output swing
high		 RL = 2kΩ to V+/2, VID = 200mV 2.90 2.98 V
RL = 150Ω to V+/2, VID = 200mV 2.80 2.93
Output swing
low		 RL = 2kΩ to V+/2, VID = –200mV 25 75 mV
RL = 150Ω to V+/2, VID = –200mV 75 150
ISC Output short circuit current Sourcing to V+/2
VID = 200mV (6)		 35 50 95 mA
Sinking to V+/2
VID = –200mV (6)		 40 55 110
IOUT Output current VOUT = 0.5V from either supply ±65 mA
+PSRR Positive power supply rejection ratio V+ = 3.0V to 3.5V, VCM = 1.5V 75 85 dB
IS Supply current (per channel) No load 4.50 2.70 4.00 mA
(1) All limits are ensured by testing or statistical analysis.
(2) Typical values represent the most likely parametric norm.
(3) Slew rate is the average of the rising and falling slew rates.
(4) Offset voltage average drift determined by dividing the change in VOS at temperature extremes by the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) Short circuit test is a momentary test. See Note 7 under 5-V Electrical Characteristics.