JAJSDE7 June   2017 LMH6644-MIL

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     各種の電源における閉ループ・ゲインと周波数との関係
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 3-V Electrical Characteristics
    6. 7.6 5-V Electrical Characteristics
    7. 7.7 ±5-V Electrical Characteristics
    8. 7.8 Typical Performance Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Input and Output Topology
        2. 9.2.1.2 Single-Supply, Low-Power Photodiode Amplifier
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントの更新通知を受け取る方法
    2. 12.2 コミュニティ・リソース
    3. 12.3 商標
    4. 12.4 静電気放電に関する注意事項
    5. 12.5 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
  • Y|0
サーマルパッド・メカニカル・データ
発注情報

8.1 Overview

The LMH6644-MIL is based on proprietary VIP10 dielectrically isolated bipolar process. This device architecture features the following:

  • Complimentary bipolar devices with exceptionally high ft (∼8 GHz) even under low-supply voltage (2.7 V) and low-bias current.
  • A class A-B turn-around stage with improved noise, offset, and reduced power dissipation compared to similar speed devices (patent pending).
  • Common Emitter push-push output stage capable of 75-mA output current (at 0.5 V from the supply rails) while consuming only 2.7 mA of total supply current per channel. This architecture allows output to reach within mV of either supply rail.
  • Consistent performance over the entire operating supply voltage range with little variation for the most important specifications (for example, BW, SR, IOUT, and so forth)
  • Significant power saving (∼40%) compared to competitive devices on the market with similar performance.