SNOSB80C February   2011  – October 2015 LMP8350

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 10-V Electrical Characteristics
    6. 6.6 6.6-V Electrical Characteristics
    7. 6.7 5-V Electrical Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Full Bandwidth Limitations
      2. 7.3.2 ESD Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable Pin and Power Mode Selection
      2. 7.4.2 VOCM Pin and Output Common-Mode Setting
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Fully-Differential Operation
      2. 8.1.2 Single Supply Operation
      3. 8.1.3 Driving Analog to Digital Converters
      4. 8.1.4 Capacitive Drive
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
    1. 9.1 Power Supply and VOCM Bypassing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation
    4. 10.4 Evaluation Board
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings(1)(2)(6)

MIN MAX UNIT
Output short circuit duration See (4)
V+ relative to V– –0.3 12.9 V
IN+, IN–, OUT, EN and VOCM pins (V+) + 0.3 (V–) – 0.3 V
Input current 1 mA
Junction temperature(5) 150 °C
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC). Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
(4) The short circuit test is a momentary test which applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can exceed the maximum allowable junction temperature of 150°C. Positive number (+) is sourcing, negative number (–) is sinking.
(5) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
(6) For soldering specifications: SNOA549

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(3) ±2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1250
Machine Model ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

See (1)
MIN MAX UNIT
Temperature range (TA) –40 85 °C
Supply voltage (VS = V+ – V–) 4.5 12 V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics Tables.
(2) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.

6.4 Thermal Information

THERMAL METRIC(1) LMP8350 UNIT
D (SOIC)
8 PINS
RθJA Junction-to-ambient thermal resistance (2) 150 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 10-V Electrical Characteristics

Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +10 V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
PARAMETER TEST CONDITIONS(2) MIN(3) TYP(4) MAX(3) UNIT
10-V DC CHARACTERISTICS
VOS Input offset voltage
(RTI)		 High power TA = 25°C ±0.6 ±4 mV
At the temperature extremes ±4.05
Mid power TA = 25°C ±0.08 ±2
At the temperature extremes ±2.03
Low power TA = 25°C ±0.1 ±2.5
At the temperature extremes ±2.52
TCVOS Input offset voltage vs.temperature(5) High power ±0.8 μV/°C
Mid power ±0.5
Low power ±0.4
IB Input bias current High power TA = 25°C 2 μA
At the temperature extremes 2.1
Mid power TA = 25°C 2.7
At the temperature extremes 3.2
Low power TA = 25°C 3.5
At the temperature extremes 3.7
AVOL Open-loop gain High power 65 90 dB
Mid power 72 130
Low power 74 114
CMVR Common-mode voltage range(6) HP at CMRR ≥ 73 dB 1.2 8.8 V
MP at CMRR ≥ 83 dB 1.2 8.8
LP at CMRR ≥ 77 dB 1.2 8.8
CMRR Common-mode rejection ratio DC, VOCM = 0,VID = 0, ΔVcm = ±0.2 V, High power 75 90 dB
Medium power 84 130
Low power 79 114
ZIND Differential input resistance VCM = mid-supply 0.48 MΩ
CIND Differential input capacitance VCM = mid-supply 1 pF
VO Output swing
(single-ended)		 High power Low Swing 0.86 0.75 9.14 V
High Swing 0.86 9.25 9.14
Mid power Low Swing 0.85 0.74 9.15
High Swing 0.85 9.26 9.15
Low power Low Swing 0.86 0.81 9.14
High Swing 0.86 9.19 9.14
ISHORT Short-circuit current Output shorted to mid-supply(7)
High power		 Low Swing –36 -65 mA
High Swing 75 108
Medium power Low Swing -26 -48
High Swing 60 85
Low power Low Swing -6 -20
High Swing 15 36
PSRR Power supply rejection ratio
VS ±10%		 High power 107 dB
Mid power 118
Low power 124
IS Supply current VEN = 8.75(8) TA = 25°C 15 18 mA
At the temperature extremes 20
VEN = 6.25(8) TA = 25°C 8 10
At the temperature extremes 11
VEN = 3.75(8) TA = 25°C 3 4
At the temperature extremes 5
PD Power-down mode Disable voltage threshold(8) < 1.65 V
Shutdown current TA = 25°C 0.75 0.9 mA
At the temperature extremes 0.95
Enable pin current 100 μA
ten Enable time High power 15 ns
Mid power 20
Low power 40
10-V AC CHARACTERISTICS
SSBW Small signal bandwidth
200 mVp-p differential		 High power 118 MHz
Mid power 87
Low power 31
SR Slew rate
2 Vp-p differential(9)		 High power 507 V/μs
Mid power 393
Low power 178
trise Rise time
2 Vp-p differential		 High power 3 ns
Mid power 3.9
Low power 9.7
tfall Fall time
2 Vp-p differential		 High power 2.8 ns
Mid power 3.8
Low power 9.6
ts 0.1% settling time
2 Vp-p 		2-V step, CL = 20 pF
High power		 20 ns
Mid power 25
Low power 38
en Input referred voltage noise
at 10 KHz		 High power 4.6 nV/√Hz
Mid power 4.8
Low power 8
In Input referred current noise
at 10 KHz		 f = 10 kHz
High power		 1.7 pA/√Hz
Mid power 1.1
Low power 0.6
THD+N Total harmonic distortion + noise
3 Vp-p at 1 KHz		 High power 0.000097%
Mid power 0.000109%
Low power 0.000185%
HD2 2nd harmonic distortion
3 Vp-p, 1 KHz		 High power –124.7 –116 dBc
Mid power –122.8
Low power –117.2
2nd harmonic distortion
6 Vp-p, 1 KHz		 High power –118.9 dBc
Mid power –117.6
Low power –114.7
HD3 3rd harmonic distortion
3 Vp-p, 1 KHz		 High power –139.9 –126 dBc
Mid power –141.9
Low power –133.3
3rd harmonic distortion
6 Vp-p, 1 KHz		 High power –129.5 dBc
Mid power –132.4
Low power –129.4
10-V VOCM INPUT CHARACTERISTICS
VOCM small signal bandwidth
200 mVp-p		 High power 4.8 MHz
Mid power 2.4
Low power 0.64
VOCM gain 1 V/V
VOCM offset voltage High power ±1.62 mV
Mid power ±0.23
Low power ±0.43
VOCM voltage range All power levels Low Swing 1.8 V
High Swing 8.2
VOCM input resistance All power levels Low Swing 30 KΩ
High Swing mid-supply
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA
(2) For annotation brevity, “HP”=High Power, “MP”=Medium Power, “LP” =Low Power, “DIS”=Disabled or shut down, “SE”=Single Ended Mode, “DM”=Differential Mode. See Table 1 in Applications section for power setting details. It is also assumed RG = RG1 = RG2
(3) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using the Statistical Quality Control (SQC) method.
(4) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(5) Drift Determined by dividing the change in parameter at temperature extremes by the total temperature change. Value is the worst case of TaMIN to 25°C and 25°C to TaMAX.
(6) At amplifier inputs.
(7) The short circuit test is a momentary test which applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can exceed the maximum allowable junction temperature of 150°C. Positive number (+) is sourcing, negative number (–) is sinking.
(8) Enable voltage is referred to V– (negative supply voltage).
(9) Slew Rate is the average of the rising and falling edges.

6.6 6.6-V Electrical Characteristics

Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +6.6 V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
PARAMETER TEST CONDITIONS(2) MIN(3) TYP(4) MAX(3) UNIT
6.6-V DC CHARACTERISTICS
VOS Input offset voltage
(RTI)		 High power TA = 25°C ±0.3 ±3.5 mV
At the temperature extremes ±3.54
Mid power TA = 25°C ±0.1 ±2.8
At the temperature extremes ±2.83
Low power TA = 25°C ±0.1 ±2.5
At the temperature extremes ±2.52
TCVOS Input offset voltage vs.temperature(5) High power ±0.7 μV/°C
Mid power ±0.5
Low power ±0.4
IB Input bias current High power TA = 25°C 1.4 μA
At the temperature extremes 2.4
Mid power TA = 25°C 2.5
At the temperature extremes 3.0
Low power TA = 25°C 3.5
At the temperature extremes 3.7
AVOL Open-loop gain High power 65 70 dB
Mid power 73 76
Low power 72 75
CMVR Common-mode voltage range(7) HP at CMRR ≥ 68 dB 1.2 5.4 V
MP at CMRR ≥ 63 dB 1.2 5.4
LP at CMRR ≥ 79 dB 1.2 5.4
CMRR Common-mode rejection ratio DC, VOCM = 0,VID = 0,
ΔVcm = ±0.2 V
High power		 70 85 dB
Mid power 86 117
Low power 81 113
ZIND Differential input resistance VCM = mid-supply 0.48 MΩ
CIND Differential input capacitance VCM = mid-supply 1 pF
VO Output swing
(single-ended)		 High power Low Swing 0.84 0.77 5.76 V
High Swing 0.84 5.83 5.76
Mid power Low Swing 0.82 0.75 5.78
High Swing 0.82 5.83 5.78
Low power Low Swing 0.83 0.77 5.77
High Swing 0.83 5.83 5.77
ISHORT Short-circuit current Output shorted to mid-supply(6)
High power		 Low Swing –30 –49 mA
High Swing 54 83
Mid power Low Swing –19 –35
High Swing 40 64
Low power Low Swing –6 –15
High Swing 15 27
PSRR Power supply rejection ratio
VS ±10%		 High power 111 dB
Mid power 117
Low power 127
IS Supply current VEN = 5.775(8) TA = 25°C 14 16 mA
At the temperature extremes 18
VEN = 4.125(8) TA = 25°C 7 9
At the temperature extremes 10
VEN = 2.475(8) TA = 25°C 2 3
At the temperature extremes 4
PD Power-down mode Disable voltage threshold(8) <1.225 V
Shutdown current TA = 25°C 0.55 0.65 mA
At the temperature extremes 0.7
Enable pin current 40 μA
ten Enable time High power 18 ns
Mid power 22
Low power 43
6.6-V AC CHARACTERISTICS
SSBW Small signal bandwidth
200 mVp-p differential		 High power 116 MHz
Mid power 85
Low power 29
SR Slew rate
2 Vp-p differential(9)		 High power 488 V/μs
Mid power 376
Low power 166
trise Rise time
2 Vp-p differential		 High power 3.1 ns
Mid power 4.2
Low power 10.4
tfall Fall time
2 Vp-p differential		 High power 3.0 ns
Mid power 4.0
Low power 10.3
ts 0.1% settling time
2 Vp-p 		2-V step, CL = 20 pF
High power		 19 ns
Mid power 25
Low power 43
en Input referred voltage noise
at 10KHz		 High power 4.5 nV/√Hz
Mid power 4.8
Low power 8
In Input referred current noise
at 10KHz		 High power 1.7 pA/√Hz
Mid power 1.2
Low power 0.6
THD+N Total harmonic distortion + noise
3 Vp-p at 1 KHz		 High power 0.000098%
Mid power 0.00011%
Low power 0.000089%
HD2 2nd harmonic distortion
3 Vp-p, 1 KHz		 High power –124.7 dBc
Mid power –122.8
Low power –117.2
2nd harmonic distortion
6 Vp-p, 1 KHz		 High power –118.9 dBc
Mid power –117.6
Low power –114.7
HD3 3rd harmonic distortion
3 Vp-p, 1 KHz		 High power –139.9 dBc
Mid power -141.9
Low power –133.3
3rd harmonic distortion
6Vp-p, 1KHz		 High power –121.4 dBc
Mid power –125.3
Low power –124.5
6.6-V VOCM INPUT CHARACTERISTICS
VOCM small signal bandwidth
200mVp-p		 High power 4.5 MHz
Mid power 2.2
Low power 0.6
VOCM gain 1 V/V
VOCM offset voltage High power ±0.97 mV
Mid power ±0.43
Low power ±0.89
VOCM voltage range All power levels Low Swing 1.2 V
High Swing 5.4
VOCM input resistance All power levels Low Swing 30 KΩ
High Swing mid-supply
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA
(2) For annotation brevity, “HP”=High Power, “MP”=Medium Power, “LP” =Low Power, “DIS”=Disabled or shut down, “SE”=Single Ended Mode, “DM”=Differential Mode. See Table 1 in Applications section for power setting details. It is also assumed RG = RG1 = RG2
(3) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using the Statistical Quality Control (SQC) method.
(4) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(5) Drift Determined by dividing the change in parameter at temperature extremes by the total temperature change. Value is the worst case of TaMIN to 25°C and 25°C to TaMAX.
(6) The short circuit test is a momentary test which applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can exceed the maximum allowable junction temperature of 150°C. Positive number (+) is sourcing, negative number (–) is sinking.
(7) At amplifier inputs.
(8) Enable voltage is referred to V- (negative supply voltage).
(9) Slew Rate is the average of the rising and falling edges.

6.7 5-V Electrical Characteristics

Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF= RG = 1 kΩ, Fully differential input, VS = +5 V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
5-V DC CHARACTERISTICS
VOS Input offset voltage
(RTI)		 High power TA = 25°C ±0.2 ±3.2 mV
At the temperature extremes ±3.6
Mid power TA = 25°C ±0.1 ±2.0
At the temperature extremes ±2.3
Low power TA = 25°C ±0.1 ±2.0
At the temperature extremes ±2.3
TCVOS Input offset voltage vs.temperature(4) High power ±0.7 μV/°C
Mid power ±0.5
Low power ±0.4
IB Input bias current High power TA = 25°C 1.5 μA
At the temperature extremes 1.6
Mid power TA = 25°C 2.5
At the temperature extremes 3.0
Low power TA = 25°C 3.5
At the temperature extremes 3.7
AVOL Open-loop gain High power 63 68 dB
Mid power 71 75
Low power 68 75
CMVR Common-mode voltage range(5) HP at CMRR ≥ 60 dB 1.15 3.85 V
MP at CMRR ≥ 86 dB 1.15 3.85
LP at CMRR ≥ 80 dB 1.15 3.85
CMRR Common-mode rejection ratio DC, VOCM = 0,VID = 0,
ΔVcm = ±0.2 V
High power		 63 79 dB
Mid power 87 114
Low power 82 114
ZIND Differential input resistance VCM = mid-supply 0.48 MΩ
CIND Differential input capacitance VCM = mid-supply 1 pF
VO Output swing
(single-ended)		 High power Low Swing 0.82 0.77 4.18 V
High Swing 0.82 4.23 4.18
Mid power Low Swing 0.82 0.75 4.18
High Swing 0.82 4.25 4.18
Low power Low Swing 0.83 0.77 4.17
High Swing 0.83 4.23 4.17
ISHORT Short-circuit current Output shorted to mid-supply(6)
High power		 Low Swing –25 –42 mA
High Swing 44 72
Mid power Low Swing –16 –31
High Swing 34 57
Low power Low Swing –5 –13
High Swing 12 23
PSRR Power supply rejection ratio
VS ±10%		 High power 117 dB
Mid power 120
Low power 111
IS Supply current VEN = 4.375(7) TA = 25°C 13 15 mA
At the temperature extremes 17
VEN = 3.125(7) TA = 25°C 7 9
At the temperature extremes 10
VEN = 1.875(7) TA = 25°C 2 3
At the temperature extremes 4
PD Power-down mode Disable voltage threshold(7) <1.025 V
Shutdown current TA = 25°C 0.50 0.85 mA
At the temperature extremes 0.90
Enable pin current 15 μA
ten Enable time High power 20 ns
Mid power 22
Low power 50
5-V AC CHARACTERISTICS
SSBW Small signal bandwidth
200 mVp-p differential		 High power 114.5 MHz
Mid power 84
Low power 28
SR Slew rate
2 Vp-p differential(8)		 High power 476 V/μs
Mid power 366
Low power 160
trIse Rise time
2 Vp-p differential		 High power 3.2 ns
Mid power 4.3
Low power 10.8
tfall Fall time
2 Vp-p differential		 High power 3.1 ns
Mid power 4.1
Low power 10.7
ts 0.1% settling time
2 Vp-p 		2-V step, CL = 20 pF
High power		 19 ns
Mid power 24
Low power 48
en Input referred voltage noise f = 10 kHz
High power		 4.5 nV/√Hz
Mid power 4.8
Low power 8
In Input referred current noise f = 10 kHz
High power		 1.8 pA/√Hz
Mid power 1.2
Low power 0.6
THD+N Total harmonic distortion + noise
3 Vp-p at 1 KHz		 High power 0.000107%
Mid power 0.000114%
Low power 0.000192%
HD2 2nd harmonic distortion
3 Vp-p, 1 KHz		 High power –125.3 dBc
Mid power –122.6
Low power –117.0
HD3 3rd harmonic distortion
3 Vp-p, 1 KHz		 High power –125.5 dBc
Mid power –130.0
Low power –128.7
5-V VOCM INPUT CHARACTERISTICS
VOCM small signal bandwidth
200 mVp-p		 High power 4.4 MHz
Mid power 2.2
Low power 0.56
VOCM gain 1 V/V
VOCM offset voltage High power ±0.46 mV
Mid power ±0.53
Low power ±0.11
VOCM voltage range All power levels Low Swing 1.15 V
High Swing 3.85
VOCM input resistance All power levels Low Swing 30 KΩ
High Swing mid-supply
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using the Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) Drift Determined by dividing the change in parameter at temperature extremes by the total temperature change. Value is the worst case of TaMIN to 25°C and 25°C to TaMAX.
(5) At amplifier inputs.
(6) The short circuit test is a momentary test which applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can exceed the maximum allowable junction temperature of 150°C. Positive number (+) is sourcing, negative number (–) is sinking.
(7) Enable voltage is referred to V- (negative supply voltage).
(8) Slew Rate is the average of the rising and falling edges.

6.8 Typical Characteristics

Unless otherwise specified, TA = 25°C, Avcl = +1, RF=RG = 1 kΩ, fully differential input, VS = +10 V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.
LMP8350 30140524.gif Figure 1. Frequency Response at 10 V
LMP8350 30140526.gif Figure 3. Frequency Response at 6.6 V
LMP8350 30140504.gif Figure 5. Frequency Response at 5 V
LMP8350 30140506.gif Figure 7. Distortion at 10 V, High Power
LMP8350 30140508.gif Figure 9. Distortion at 10 V, Mid Power
LMP8350 30140510.gif Figure 11. Distortion at 10 V, Low Power
LMP8350 30140512.gif Figure 13. Distortion at 5 V, High Power
LMP8350 30140514.gif Figure 15. Distortion at 5 V, Mid Power
LMP8350 30140516.gif Figure 17. Distortion at 5 V, Low Power
LMP8350 30140518.gif Figure 19. Voltage Noise at 10 V
LMP8350 30140520.gif Figure 21. Voltage Noise at 6.6 V
LMP8350 30140522.gif Figure 23. Voltage Noise at 5 V
LMP8350 30140513.gif Figure 25. Pulse Response at 10 V
LMP8350 30140517.gif Figure 27. Pulse Response at 5 V
LMP8350 30140525.gif Figure 2. VOCM Frequency Response at 10 V
LMP8350 30140527.gif Figure 4. VOCM Frequency Response at 6.6 V
LMP8350 30140505.gif Figure 6. VOCM Frequency Response at 5 V
LMP8350 30140507.gif Figure 8. Distortion at 6.6 V, High Power
LMP8350 30140509.gif Figure 10. Distortion at 6.6 V, Mid Power
LMP8350 30140511.gif Figure 12. Distortion at 6.6 V, Low Power
LMP8350 30140563.gif Figure 14. THD+N at 10 V
LMP8350 30140564.gif Figure 16. THD+N at 6.6 V
LMP8350 30140565.gif Figure 18. THD+N at 5 V
LMP8350 30140519.gif Figure 20. Current Noise at 10 V
LMP8350 30140521.gif Figure 22. Current Noise at 6.6 V
LMP8350 30140523.gif Figure 24. Current Noise at 5 V
LMP8350 30140515.gif Figure 26. Pulse Response at 6.6 V