SNOS998I February   2002  – October 2015 LMV761 , LMV762 , LMV762Q-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings: LMV761, LMV762
    3. 6.3  ESD Ratings: LMV762Q-Q1
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Thermal Information
    6. 6.6  2.7-V Electrical Characteristics
    7. 6.7  5-V Electrical Characteristics
    8. 6.8  2-V Switching Characteristics
    9. 6.9  5-V Switching Characteristics
    10. 6.10 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Basic Comparator
      2. 7.3.2 Hysteresis
      3. 7.3.3 Input
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Links
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

See (1)(2)
MIN MAX UNIT
Supply voltage (V+ – V−) 5.5 V
Differential input voltage Supply Voltage
Voltage between any two pins Supply Voltage
Output short circuit duration(3) Current at input pin ±5 mA
Soldering information Infrared or convection (20 sec.) 235 °C
Wave soldering (10 sec.) (Lead temp) 260 °C
Junction temperature 150 °C
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.
(3) Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output current in excess of ±25 mA over long term may adversely affect reliability.

6.2 ESD Ratings: LMV761, LMV762

VALUE UNIT
V(ESD) Electrostatic discharge(2) Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ± 2000 V
Machine model ± 200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) Unless otherwise specified human body model is 1.5 kΩ in series with 100 pF. Machine model 200 pF.

6.3 ESD Ratings: LMV762Q-Q1

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ± 2000 V
Machine model ± 200
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.4 Recommended Operating Conditions

MIN MAX UNIT
Supply voltage (V+ – V−) 2.7 5.25 V
Temperature range −40 125 °C

6.5 Thermal Information

THERMAL METRIC(1) LMV761 LMV762, LMV762Q-Q1 UNIT
D (SOIC) DBV (SOT-23) DGK (VSSOP)
8 PINS 6 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance (2) 190 265 235 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
(2) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA) RθJA. All numbers apply for packages soldered directly into a PCB.

6.6 2.7-V Electrical Characteristics

Unless otherwise specified, all limited ensured for TJ = 25°C, VCM = V+ / 2, V+ = 2.7 V, V− = 0 V−.
PARAMETER TEST CONDITIONS MIN(4) TYP(3) MAX(4) UNIT
VOS Input offset voltage 0.2 mV
apply at the temperature extremes(2) 1
IB Input bias current(5) 0.2 50 pA
IOS Input offset current(5) 0.001 5 pA
CMRR Common-mode rejection ratio 0 V < VCM < VCC – 1.3 V 80 100 dB
PSRR Power supply rejection ratio V+ = 2.7 V to 5 V 80 110 dB
CMVR Input common-mode voltage range CMRR > 50 dB apply at the temperature extremes(2) −0.3 1.5 V
VO Output swing high IL = 2 mA, VID = 200 mV V+ – 0.35 V+ – 0.1 V
Output swing low IL = −2 mA, VID = –200 mV 90 250 mV
ISC Output short circuit current(1) Sourcing, VO = 1.35 V, VID = 200 mV 6 20 mA
Sinking, VO = 1.35 V, VID = –200 mV 6 15
IS Supply current LMV761 (single comparator) 275 700 μA
LMV762, LMV762Q-Q1 (both comparators) 550 μA
apply at the temperature extremes(2) 1400
IOUT LEAKAGE Output leakage I at shutdown SD = GND, VO = 2.7 V 0.2 μA
IS LEAKAGE Supply leakage I at shutdown SD = GND, VCC = 2.7 V 0.2 2 μA
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Recommended Operating Conditions for information on temperature de-rating of this device. Absolute Maximum Rating indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) Maximum temperature ensured range is −40°C to +125°C.
(3) Typical values represent the most likely parametric norm.
(4) All limits are specified by testing or statistical analysis.
(5) Specified by design.

6.7 5-V Electrical Characteristics

Unless otherwise specified, all limited ensured for TJ = 25°C, VCM = V+ / 2, V+ = 5 V, V− = 0 V−.
PARAMETER TEST CONDITIONS MIN(4) TYP(3) MAX(4) UNIT
VOS Input offset voltage 0.2 mV
apply at the temperature extremes(2) 1
IB Input bias current(5) 0.2 50 pA
IOS Input offset current(5) 0.01 5 pA
CMRR Common-mode rejection ratio 0 V < VCM < VCC – 1.3 V 80 100 dB
PSRR Power supply rejection ratio V+ = 2.7 V to 5 V 80 110 dB
CMVR Input common-mode voltage range CMRR > 50 dB apply at the temperature extremes(2) −0.3 3.8 V
VO Output swing high IL = 4 mA, VID = 200 mV V+ – 0.35 V+ – 0.1 V
Output swing low IL = –4 mA, VID = –200 mV 120 250 mV
ISC Output short circuit current(1) Sourcing, VO = 2.5 V, VID = 200 mV 6 60 mA
Sinking, VO = 2.5 V, VID = −200 mV 6 40
IS Supply current LMV761 (single comparator) 225 700 μA
LMV762, LMV762Q-Q1 (both comparators) 450 μA
apply at the temperature extremes(2) 1400
IOUT LEAKAGE Output leakage I at shutdown SD = GND, VO = 5 V 0.2 μA
IS LEAKAGE Supply leakage I at shutdown SD = GND, VCC = 5 V 0.2 2 μA
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Recommended Operating Conditions for information on temperature de-rating of this device. Absolute Maximum Rating indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) Maximum temperature ensured range is −40°C to +125°C.
(3) Typical values represent the most likely parametric norm.
(4) All limits are specified by testing or statistical analysis.
(5) Specified by design.

6.8 2-V Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPD Propagation delay
RL = 5.1 kΩ
CL = 50 pF		 Overdrive = 5 mV 270 ns
Overdrive = 10 mV 205
Overdrive = 50 mV 120
tSKEW Propagation delay skew 5 ns
tr Output rise time 10% to 90% 1.7 ns
tf Output fall time 90% to 10% 1.8 ns
ton Turnon time from shutdown 6 μs

6.9 5-V Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPD Propagation delay
RL = 5.1 kΩ
CL = 50 pF		 Overdrive = 5 mV 225 ns
Overdrive = 10 mV 190
Overdrive = 50 mV 120
tSKEW Propagation delay skew 5 ns
tr Output rise time 10% to 90% 1.7 ns
tf Output fall time 90% to 10% 1.5 ns
ton Turnon time from shutdown 4 μs

6.10 Typical Characteristics

LMV761 LMV762 LMV762Q-Q1 20037004.gif
VO = High
Figure 1. PSI vs VCC
LMV761 LMV762 LMV762Q-Q1 20037010_A.gif
Figure 3. VOS vs VCC
LMV761 LMV762 LMV762Q-Q1 20037025.gif
Figure 5. Input Bias vs Common Mode at 25°C
LMV761 LMV762 LMV762Q-Q1 20037012.gif
Figure 7. Output Voltage vs Supply Voltage
LMV761 LMV762 LMV762Q-Q1 20037014.gif
Figure 9. Output Voltage vs Supply Voltage
LMV761 LMV762 LMV762Q-Q1 20037007.gif
Figure 11. ISINK vs VOUT
LMV761 LMV762 LMV762Q-Q1 20037009.gif
Figure 13. ISINK vs VOUT
LMV761 LMV762 LMV762Q-Q1 20037020.gif
Figure 15. Response Time vs Input Overdrives Positive Transition
LMV761 LMV762 LMV762Q-Q1 20037022.gif
Figure 17. Response Time vs Input Overdrives Negative Transition
LMV761 LMV762 LMV762Q-Q1 20037005.gif
VO = Low
Figure 2. PSI vs VCC
LMV761 LMV762 LMV762Q-Q1 20037024.gif
Figure 4. Input Bias vs Common Mode at 25°C
LMV761 LMV762 LMV762Q-Q1 20037011.gif
Figure 6. Output Voltage vs Supply Voltage
LMV761 LMV762 LMV762Q-Q1 20037013.gif
Figure 8. Output Voltage vs Supply Voltage
LMV761 LMV762 LMV762Q-Q1 20037006.gif
Figure 10. ISOURCE vs VOUT
LMV761 LMV762 LMV762Q-Q1 20037008.gif
Figure 12. ISOURCE vs VOUT
LMV761 LMV762 LMV762Q-Q1 20037019.gif
Figure 14. Prop Delay vs Overdrive
LMV761 LMV762 LMV762Q-Q1 20037021.gif
Figure 16. Response Time vs Input Overdrives Positive Transition
LMV761 LMV762 LMV762Q-Q1 20037023.gif
Figure 18. Response Time vs Input Overdrives Negative Transition