SNOSCY7 June 2014 LP2996A
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
AVIN to GND | −0.3 | 6 | V | |
PVIN to GND | –0.3 | AVIN | ||
VDDQ(1) | −0.3 | 6 | V | |
Junction Temperature | 150 | °C | ||
Lead Temperature (Soldering, 10 sec) | 260 | °C |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Tstg | Storage temperature range | −65 | 150 | °C | |
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | 1 | kV |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Junction Temp. Range(2) | 0 | 125 | °C | ||
AVIN to GND | 2.2 | 5.5 | V | ||
PVIN Supply Voltage | 0 | AVIN | |||
SD Input Voltage | 0 | AVIN |
THERMAL METRIC(1)(2)(3) | SO PowerPAD-8 DDA | UNIT | |
---|---|---|---|
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 56.5 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 65.1 | |
RθJB | Junction-to-board thermal resistance | 36.5 | |
ψJT | Junction-to-top characterization parameter | 15.9 | |
ψJB | Junction-to-board characterization parameter | 36.5 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 8.4 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VREF | VREF voltage (DDR I) | VIN = VDDQ = 2.3 V | 1.135 | 1.158 | 1.185 | V |
VIN = VDDQ = 2.5 V | 1.235 | 1.258 | 1.285 | |||
VIN = VDDQ = 2.7 V | 1.335 | 1.358 | 1.385 | |||
VREF voltage (DDR II) | PVIN = VDDQ = 1.7 V | 0.837 | 0.860 | 0.887 | ||
PVIN = VDDQ = 1.8 V | 0.887 | 0.910 | 0.937 | |||
PVIN = VDDQ = 1.9 V | 0.936 | 0.959 | 0.986 | |||
VREF Voltage (DDR III) | PVIN = VDDQ = 1.35V | 0.669 | 0.684 | 0.699 | ||
PVIN = VDDQ = 1.5V | 0.743 | 0.758 | 0.773 | |||
PVIN = VDDQ = 1.6V | 0.793 | 0.808 | 0.823 | |||
ZVREF | VREF Output Impedance | IREF = –30 to +30 µA | 2.5 | kΩ | ||
VTT | VTT Output Voltage (DDR I) (7) | IOUT = 0 A | V | |||
VIN = VDDQ = 2.3 V | 1.120 | 1.159 | 1.190 | |||
VIN = VDDQ = 2.5 V | 1.210 | 1.259 | 1.290 | |||
VIN = VDDQ = 2.7 V | 1.320 | 1.359 | 1.390 | |||
IOUT = +/– 1.5 A | ||||||
VIN = VDDQ = 2.3 V | 1.125 | 1.159 | 1.190 | |||
VIN = VDDQ = 2.5 V | 1.225 | 1.259 | 1.290 | |||
VIN = VDDQ = 2.7 V | 1.325 | 1.359 | 1.390 | |||
VTT Output Voltage (DDR II) (7) | IOUT = 0 A, AVIN = 2.5 V | V | ||||
PVIN = VDDQ = 1.7 V | 0.822 | 0.856 | 0.887 | |||
PVIN = VDDQ = 1.8 V | 0.874 | 0.908 | 0.939 | |||
PVIN = VDDQ = 1.9 V | 0.923 | 0.957 | 0.988 | |||
IOUT = +/– 0.5A, AVIN = 2.5 V | ||||||
PVIN = VDDQ = 1.7 V | 0.820 | 0.856 | 0.890 | |||
PVIN = VDDQ = 1.8 V | 0.870 | 0.908 | 0.940 | |||
PVIN = VDDQ = 1.9 V | 0.920 | 0.957 | 0.990 | |||
VTT Output Voltage (DDR III) (7) | IOUT = 0A, AVIN = 2.5 V | V | ||||
PVIN = VDDQ = 1.35V | 0.656 | 0.677 | 0.698 | |||
PVIN = VDDQ = 1.5 V | 0.731 | 0.752 | 0.773 | |||
PVIN = VDDQ = 1.6 V | 0.781 | 0.802 | 0.823 | |||
IOUT = +0.2A, AVIN = 2.5V PVIN = VDDQ = 1.35V |
0.667 | 0.688 | 0.710 | |||
IOUT = -0.2A, AVIN = 2.5V PVIN = VDDQ = 1.35V |
0.641 | 0.673 | 0.694 | |||
IOUT = +0.4 A, AVIN = 2.5 V PVIN = VDDQ = 1.5 V |
0.740 | 0.763 | 0.786 | |||
IOUT = –0.4 A, AVIN = 2.5 V PVIN = VDDQ = 1.5 V |
0.731 | 0.752 | 0.773 | |||
IOUT = +0.5A, AVIN = 2.5 V PVIN = VDDQ = 1.6 V |
0.790 | 0.813 | 0.836 | |||
IOUT = -0.5 A, AVIN = 2.5 V PVIN = VDDQ = 1.6 V |
0.781 | 0.802 | 0.823 | |||
VOSVtt | VTT Output Voltage Offset (VREF – VTT) for DDR I (7) | IOUT = 0 A | –30 | 0 | 30 | mV |
IOUT = –1.5 A | –30 | 0 | 30 | |||
IOUT = 1.5 A | –30 | 0 | 30 | |||
VTT Output Voltage Offset (VREF – VTT) for DDR II (7) | IOUT = 0 A | –30 | 0 | 30 | ||
IOUT = –0.5 A | –30 | 0 | 30 | |||
IOUT = 0.5 A | –30 | 0 | 30 | |||
VTT Output Voltage Offset (VREF – VTT) for DDR III (7) | IOUT = 0 A | –30 | 0 | 30 | ||
IOUT = ±0.2 A | –30 | 0 | 30 | |||
IOUT = ±0.4 A | –30 | 0 | 30 | |||
IOUT = ±0.5 A | –30 | 0 | 30 | |||
IQ | Quiescent Current (5) | IOUT = 0 A | 320 | 500 | µA | |
ZVDDQ | VDDQ Input Impedance | 100 | kΩ | |||
ISD | Quiescent current in shutdown (5) | SD = 0 V | 115 | 150 | µA | |
IQ_SD | Shutdown leakage current | SD = 0 V | 2 | 5 | ||
VIH | Minimum Shutdown High Level | 1.9 | V | |||
VIL | Maximum Shutdown Low Level | 0.8 | ||||
Iv | VTT leakage current in shutdown | SD = 0 V VTT = 1.25 V |
1 | 10 | µA | |
ISENSE | VSENSE Input current | 13 | nA | |||
TSD | Thermal Shutdown (6) | 165 | °C | |||
TSD_HYS | Thermal Shutdown Hysteresis | 10 |