JAJSCD8C August   2015  – May 2017 LP8861-Q1

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
    1.     システム効率
  3. 概要
    1.     概略回路図
  4. 改訂履歴
  5. デバイス比較表
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Internal LDO Electrical Characteristics
    7. 7.7  Protection Electrical Characteristics
    8. 7.8  Power Line FET Control Electrical Characteristics
    9. 7.9  Current Sinks Electrical Characteristics
    10. 7.10 PWM Brightness Control Electrical Characteristics
    11. 7.11 Boost/SEPIC Converter Characteristics
    12. 7.12 Logic Interface Characteristics
    13. 7.13 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated Boost/SEPIC Converter
      2. 8.3.2 Internal LDO
      3. 8.3.3 LED Current Sinks
        1. 8.3.3.1 Current Sink Configuration
        2. 8.3.3.2 Current Setting
        3. 8.3.3.3 Brightness Control
      4. 8.3.4 Power-Line FET Control
      5. 8.3.5 LED Current Dimming With External Temperature Sensor
      6. 8.3.6 Protection and Fault Detection
        1. 8.3.6.1 Adaptive Boost Control and Functionality of LED Fault Comparators
        2. 8.3.6.2 Overview of the Fault/Protection Schemes
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device States
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application for 4 LED Strings
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Inductor Selection
          2. 9.2.1.2.2 Output Capacitor Selection
          3. 9.2.1.2.3 Input Capacitor Selection
          4. 9.2.1.2.4 LDO Output Capacitor
          5. 9.2.1.2.5 Diode
          6. 9.2.1.2.6 Power Line Transistor
          7. 9.2.1.2.7 Input Current Sense Resistor
        3. 9.2.1.3 Application Curves
      2. 9.2.2 High Output Current Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 SEPIC Mode Application
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
          1. 9.2.3.2.1 Diode
          2. 9.2.3.2.2 Inductor
        3. 9.2.3.3 Application Curves
      4. 9.2.4 Application with Temperature Based LED Current De-rating
        1. 9.2.4.1 Design Requirements
        2. 9.2.4.2 Detailed Design Procedure
        3. 9.2.4.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Boost/SEPIC Converter Characteristics

TJ = −40°C to +125°C (unless otherwise noted).
Unless otherwise specified: VIN = 12 V, VVDDIO/EN = 3.3 V, L = 22 μH, CIN = 2 × 10-μF ceramic and 33-μF electrolytic,
COUT = 2 × 10-μF ceramic and 33-μF electrolytic, D = NRVB460MFS, ƒSW = 300 kHz.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Input voltage 4.5 40 V
VOUT Output voltage 10 45 V
ƒSW_MIN Minimum switching frequency (central frequency if spread spectrum is enabled) Defined by RFSET resistor 300 kHz
ƒSW_MAX Maximum switching frequency (central frequency if spread spectrum is enabled) 2200 kHz
VOUT/VIN Conversion ratio 10
TOFF Minimum switch OFF time(1) ƒSW ≥ 1.15 MHz 55 ns
ISW_MAX SW current limit 1.8 2 2.2 A
RDSon FET RDSon Pin-to-pin 240 400
ƒSYNC External SYNC frequency 300 2200 kHz
tSYNC_ON_MIN External SYNC minimum ON time(1) 150 ns
tSYNC_OFF_MIN External SYNC minimum OFF time(1) 150 ns
This specification is not ensured by ATE.