JAJSCD8C August   2015  – May 2017 LP8861-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
    1.     システム効率
  3. 3 概要
    1.     概略回路図
  4. 4 改訂履歴
  5. 5 デバイス比較表
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Internal LDO Electrical Characteristics
    7. 7.7  Protection Electrical Characteristics
    8. 7.8  Power Line FET Control Electrical Characteristics
    9. 7.9  Current Sinks Electrical Characteristics
    10. 7.10 PWM Brightness Control Electrical Characteristics
    11. 7.11 Boost/SEPIC Converter Characteristics
    12. 7.12 Logic Interface Characteristics
    13. 7.13 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated Boost/SEPIC Converter
      2. 8.3.2 Internal LDO
      3. 8.3.3 LED Current Sinks
        1. 8.3.3.1 Current Sink Configuration
        2. 8.3.3.2 Current Setting
        3. 8.3.3.3 Brightness Control
      4. 8.3.4 Power-Line FET Control
      5. 8.3.5 LED Current Dimming With External Temperature Sensor
      6. 8.3.6 Protection and Fault Detection
        1. 8.3.6.1 Adaptive Boost Control and Functionality of LED Fault Comparators
        2. 8.3.6.2 Overview of the Fault/Protection Schemes
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device States
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application for 4 LED Strings
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Inductor Selection
          2. 9.2.1.2.2 Output Capacitor Selection
          3. 9.2.1.2.3 Input Capacitor Selection
          4. 9.2.1.2.4 LDO Output Capacitor
          5. 9.2.1.2.5 Diode
          6. 9.2.1.2.6 Power Line Transistor
          7. 9.2.1.2.7 Input Current Sense Resistor
        3. 9.2.1.3 Application Curves
      2. 9.2.2 High Output Current Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 SEPIC Mode Application
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
          1. 9.2.3.2.1 Diode
          2. 9.2.3.2.2 Inductor
        3. 9.2.3.3 Application Curves
      4. 9.2.4 Application with Temperature Based LED Current De-rating
        1. 9.2.4.1 Design Requirements
        2. 9.2.4.2 Detailed Design Procedure
        3. 9.2.4.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

9.2.3.2.1 Diode

A Schottky diode with a low forward drop and fast switching speed should be used for the SEPIC output diode. Do not use ordinary rectifier diodes, because slow switching speeds and long recovery times degrade the efficiency and load regulation. The diode must be able to handle peak repetitive current greater than the integrated FET peak current (SW pin limit), thus 3 A or higher must be used to ensure reliable operation. Average current rating should be greater than the maximum output current. Choose a diode with reverse breakdown larger than the sum of input voltage and output voltage.