JAJSCD8C August   2015  – May 2017 LP8861-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
    1.     システム効率
  3. 3 概要
    1.     概略回路図
  4. 4 改訂履歴
  5. 5 デバイス比較表
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Internal LDO Electrical Characteristics
    7. 7.7  Protection Electrical Characteristics
    8. 7.8  Power Line FET Control Electrical Characteristics
    9. 7.9  Current Sinks Electrical Characteristics
    10. 7.10 PWM Brightness Control Electrical Characteristics
    11. 7.11 Boost/SEPIC Converter Characteristics
    12. 7.12 Logic Interface Characteristics
    13. 7.13 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated Boost/SEPIC Converter
      2. 8.3.2 Internal LDO
      3. 8.3.3 LED Current Sinks
        1. 8.3.3.1 Current Sink Configuration
        2. 8.3.3.2 Current Setting
        3. 8.3.3.3 Brightness Control
      4. 8.3.4 Power-Line FET Control
      5. 8.3.5 LED Current Dimming With External Temperature Sensor
      6. 8.3.6 Protection and Fault Detection
        1. 8.3.6.1 Adaptive Boost Control and Functionality of LED Fault Comparators
        2. 8.3.6.2 Overview of the Fault/Protection Schemes
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device States
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application for 4 LED Strings
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Inductor Selection
          2. 9.2.1.2.2 Output Capacitor Selection
          3. 9.2.1.2.3 Input Capacitor Selection
          4. 9.2.1.2.4 LDO Output Capacitor
          5. 9.2.1.2.5 Diode
          6. 9.2.1.2.6 Power Line Transistor
          7. 9.2.1.2.7 Input Current Sense Resistor
        3. 9.2.1.3 Application Curves
      2. 9.2.2 High Output Current Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 SEPIC Mode Application
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
          1. 9.2.3.2.1 Diode
          2. 9.2.3.2.2 Inductor
        3. 9.2.3.3 Application Curves
      4. 9.2.4 Application with Temperature Based LED Current De-rating
        1. 9.2.4.1 Design Requirements
        2. 9.2.4.2 Detailed Design Procedure
        3. 9.2.4.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Voltage on pins VIN, VSENSE_N, SD, SW, FB –0.3 50 V
OUT1…OUT4 –0.3 45
LDO, SYNC, FSET, ISET, TSENSE, TSET, PWM, VDDIO/EN, FAULT –0.3 5.5
Continuous power dissipation(3) Internally Limited
Ambient temperature range, TA(4) –40 125 ºC
Junction temperature range, TJ(4) –40 150 ºC
Maximum lead temperature (soldering)  See(5) ºC
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to the potential at the GND pins.
(3) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 165°C (typical) and disengages at TJ = 145°C (typical).
(4) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 150°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).
(5) For detailed soldering specifications and information, refer to the PowerPAD™ Thermally Enhanced Package Application Note (SLMA002).