JAJSPY3 August   2023 LV5144

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 概要 (続き)
  7. 6 Pin Configuration and Functions
    1. 6.1 Wettable Flanks
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Range (VIN)
      2. 8.3.2  Output Voltage Setpoint and Accuracy (FB)
      3. 8.3.3  High-Voltage Bias Supply Regulator (VCC)
      4. 8.3.4  Precision Enable (EN/UVLO)
      5. 8.3.5  Power Good Monitor (PGOOD)
      6. 8.3.6  Switching Frequency (RT, SYNCIN)
        1. 8.3.6.1 Frequency Adjust
        2. 8.3.6.2 Clock Synchronization
      7. 8.3.7  Configurable Soft Start (SS/TRK)
        1. 8.3.7.1 Tracking
      8. 8.3.8  Voltage-Mode Control (COMP)
      9. 8.3.9  Gate Drivers (LO, HO)
      10. 8.3.10 Current Sensing and Overcurrent Protection (ILIM)
      11. 8.3.11 OCP Duty Cycle Limiter
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Standby Mode
      3. 8.4.3 Active Mode
      4. 8.4.4 Diode Emulation Mode
      5. 8.4.5 Thermal Shutdown
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Design and Implementation
      2. 9.1.2 Power Train Components
        1. 9.1.2.1 Inductor
        2. 9.1.2.2 Output Capacitors
        3. 9.1.2.3 Input Capacitors
        4. 9.1.2.4 Power MOSFETs
      3. 9.1.3 Control Loop Compensation
      4. 9.1.4 EMI Filter Design
    2. 9.2 Typical Applications
      1. 9.2.1 Design 1 – 12-A High-Efficiency Synchronous Buck DC/DC Regulator
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Design 2 – High Density, 12-V, 8-A Rail From 48-V Telecom Power
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 Power Stage Layout
        2. 9.4.1.2 Gate Drive Layout
        3. 9.4.1.3 PWM Controller Layout
        4. 9.4.1.4 Thermal Design and Layout
        5. 9.4.1.5 Ground Plane Design
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 サード・パーティ製品に関する免責事項
      2. 10.1.2 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
        1. 10.2.1.1 PCB Layout Resources
        2. 10.2.1.2 Thermal Design Resources
    3. 10.3 ドキュメントの更新通知を受け取る方法
    4. 10.4 サポート・リソース
    5. 10.5 Trademarks
    6. 10.6 静電気放電に関する注意事項
    7. 10.7 用語集
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.3.9 Gate Drivers (LO, HO)

The LV5144 gate driver impedances are low enough to perform effectively in high output current applications where large die-size or paralleled MOSFETs with correspondingly large gate charge, QG, are used. Measured at VVCC = 7.5 V, the low-side driver of the LV5144 has a low impedance pulldown path of 0.9 Ω to minimize the effect of dv/dt induced turn-on, particularly with low gate-threshold voltage MOSFETs. Similarly, the high-side driver has 1.5-Ω and 0.9-Ω pullup and pulldown impedances, respectively, for faster switching transition times, lower switching loss, and greater efficiency.

The high-side gate driver works in conjunction with an integrated bootstrap diode and external bootstrap capacitor, CBST. When the low-side MOSFET conducts, the SW voltage is approximately at 0 V and CBST is charged from VCC through the integrated boot diode. Connect a 0.1-μF or larger ceramic capacitor close to the BST and SW pins.

Furthermore, there is a proprietary adaptive dead-time control on both switching edges to prevent shoot-through and cross-conduction, minimize body diode conduction time, and reduce body diode reverse recovery losses.