JAJSPY3 August 2023 LV5144
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
INPUT SUPPLY | ||||||
VIN | Operating input voltage range | 6 | 95 | V | ||
IQ-RUN | Operating input current, not switching | VEN/UVLO = 1.5 V, VSS/TRK = 0 V | 2 | mA | ||
IQ-STBY | Standby input current | VEN/UVLO = 1 V | 2 | mA | ||
IQ-SHDN | Shutdown input current | VEN/UVLO = 0 V, VVCC < 1 V | 20 | µA | ||
VCC REGULATOR | ||||||
VVCC | VCC regulation voltage | VSS/TRK = 0 V, 9 V < VVIN < 48 V, 0 mA < IVCC < 20 mA | 7.5 | V | ||
VVCC-LDO | VIN to VCC dropout voltage | VVIN = 6 V, VSS/TRK = 0 V, IVCC = 20 mA | 0.25 | 0.72 | V | |
ISC-LDO | VCC short-circuit current | VSS/TRK = 0 V, VVCC = 0 V | 40 | 50 | 70 | mA |
VVCC-UV | VCC undervoltage threshold | VCC rising | 4.8 | 4.93 | 5.2 | V |
VVCC-UVH | VCC undervoltage hysteresis | Rising threshold – falling threshold | 0.26 | V | ||
VVCC-EXT | Minimum external bias voltage | Voltage required to disable VCC regulator | 8 | V | ||
IVCC | External VCC input current, not switching | VSS/TRK = 0 V, VVCC = 13 V | 2.3 | mA | ||
ENABLE AND INPUT UVLO | ||||||
VSHDN | Shutdown to standby threshold | VEN/UVLO rising | 0.42 | V | ||
VSHDN-HYS | Shutdown threshold hysteresis | EN/UVLO Rising threshold – falling threshold | 50 | mV | ||
VEN | Standby to operating threshold | VEN/UVLO rising | 1.164 | 1.2 | 1.236 | V |
IEN-HYS | Standby to operating hysteresis current | VEN/UVLO = 1.5 V | 9 | 10 | 11 | µA |
ERROR AMPLIFIER | ||||||
VREF | FB reference Voltage | FB connected to COMP | 792 | 800 | 808 | mV |
IFB-BIAS | FB input bias current | VFB = 0.8 V, -40℃ to +125℃ | –100 | 100 | nA | |
IFB-BIAS | FB input bias current | VFB =0.8 V, TJ = +150℃ | –200 | 200 | nA | |
VCOMP-OH |
COMP output high voltage | VFB = 0 V, COMP sourcing 1 mA | 5 | V | ||
VCOMP-OL | COMP output low voltage | COMP sinking 1 mA | 0.3 | V | ||
AVOL | DC gain | 94 | dB | |||
GBW | Unity gain bandwidth | 6.5 | MHz | |||
SOFT-STARTand VOLTAGE TRACKING | ||||||
ISS | SS/TRK capacitor charging current | VSS/TRK = 0 V | 8.5 | 10 | 12 | µA |
RSS | SS/TRK discharge FET resistance | VEN/UVLO = 1 V, VSS/TRK = 0.1 V | 11 | Ω | ||
VSS-FB | SS/TRK to FB offset | VSS/TRK – VFB, VFB = 0.8 V | –15 | 0 | 15 | mV |
VSS-CLAMP | SS/TRK clamp voltage | VFB = 0.8 V | 0.115 | V | ||
POWER GOOD INDICATOR | ||||||
PGUTH | FB upper threshold for PGOOD high to low | % of VREF, VFB rising | 108 | % | ||
PGLTH | FB lower threshold for PGOOD high to low | % of VREF, VFB falling | 92 | % | ||
PGHYS_U | PGOOD upper theshold hysteresis | % of VREF | 3 | % | ||
PGHYS_L | PGOOD lower threshold hysteresis | % of VREF | 2 | % | ||
TPG-RISE | PGOOD rising filter | FB to PGOOD rising edge | 25 | us | ||
TPG-FALL | PGOOD falling filter | FB to PGOOD falling edge | 25 | us | ||
VPG-OL | PGOOD low state output voltage | VFB = 0.9 V, IPGOOD = 2 mA | 150 | mV | ||
IPG-OH | PGOOD high state leakage current | VFB = 0.8 V, VPGOOD = 13 V, -40℃ to +150℃ | 400 | nA | ||
IPG-OH | PGOOD high state leakage current | VFB = 0.8 V, VPGOOD = 13 V | 400 | nA | ||
OSCILLATOR | ||||||
FSW1 | Oscilator frequency – 1 | RRT = 100 kΩ | 100 | kHz | ||
FSW2 | Oscillator frequency – 2 | RRT = 25 kΩ | 400 | kHz | ||
FSW3 | Oscillator frequency – 3 | RRT = 12.5 kΩ | 780 | kHz | ||
SYNCHRONIZATION INPUT AND OUTPUT | ||||||
FSYNC | SYNCIN external clock frequency range | % of nominal frequency set by RRT | –20 | 50 | % | |
VSYNC-IH | SYNCIN input logic high | 2 | V | |||
VSYNC-IL | SYNCIN input logic low | 0.8 | V | |||
RSYNC-IN | SYNCIN input resistance | VSYNCIN = 3 V | 20 | kΩ | ||
TSYNCI-PW | SYNCIN input minimum pulsewidth | Minimum high state or low state duration | 50 | ns | ||
VSYNCO-OH | SYNCOUT high-state output voltage | ISYNCOUT = –1 mA (sourcing current) | 3 | V | ||
VSYNCO-OL | SYNCOUT low-state output voltage | ISYNCOUT = 1 mA (sinking current) | 0.4 | V | ||
TSYNCOUT | Delay from HO rising to SYNCOUT leading edge | VSYNCIN = 0 V, TS = 1/FSW, FSW set by RRT | TS/2 – 140 | ns | ||
TSYNCIN | Delay from SYNCIN rising to HO leading edge | 50% to 50% | 150 | ns | ||
GATE DRIVERS | ||||||
RHO-UP | HO high state resistance, HO to BST | VBST – VSW = 7 V, IHO = –100 mA | 1.5 | Ω | ||
RHO-DOWN | HO low state resistance, HO to SW | VBST – VSW = 7 V, IHO = 100 mA | 0.9 | Ω | ||
RLO-UP | LO high state resistance, LO to VCC | VBST – VSW = 7 V, ILO = –100 mA | 1.5 | Ω | ||
RLO-DOWN | LO low state resistance, LO to PGND | VBST – VSW = 7 V, ILO = 100 mA | 0.9 | Ω | ||
IHOH, ILOH | HO, LO source current | VBST – VSW = 7 V, HO = SW, LO = AGND | 2.3 | A | ||
IHOL, ILOL | HO, LO sink current | VBST – VSW = 7 V, HO = BST, LO = VCC | 3.5 | A | ||
THO-TR, TLO-TR | HO, LO rise times | VBST – VSW = 7 V, CLOAD = 1 nF, 20% to 80% | 7 | ns | ||
THO-TF, TLO-TF | HO, LO fall times | VBST – VSW = 7 V, CLOAD = 1 nF, 80% to 20% | 4 | ns | ||
THO-DT | HO turn-on deadtime | VBST – VSW = 7 V, 50% to 50% | 14 | ns | ||
TLO-DT | LO turn-on deadtime | VBST – VSW = 7 V, 50% to 50% | 14 | ns | ||
BOOTSTRAP DIODE AND UNDER-VOLTAGE THRESHOLD | ||||||
VBST-FWD | VCC to BST | VCC to BST, BST pin sourcing 20 mA | 0.75 | 0.9 | V | |
IQ-BST | BST to SW quiescent current, not switching | VSS/TRK = 0 V, VSW = 48 V, VBST = 54 V | 80 | µA | ||
VBST-UV | BST to SW undervoltage detection | VBST – VSW falling | 3.4 | V | ||
VBST-HYS | BST to SW undervoltage hysteresis | VBST – VSW rising | 0.42 | V | ||
PWM CONTROL | ||||||
TON(min) | Minimum controllable on-time | VBST – VSW = 7 V, HO 50% to 50% | 45 | ns | ||
TOFF(min) | Minimum off-time | VBST – VSW = 7 V, HO 50% to 50% | 145 | ns | ||
DC100KHz | Maximum duty cycle | FSW = 100 kHz, 5.5 V < VVIN < 60 V | 98 | 99 | % | |
DC400kHz | FSW = 400 kHz, 5.5 V < VVIN < 60 V | 90 | 94 | % | ||
VRAMP(min) | RAMP valley voltage (COMP at 0% duty cycle) | 300 | mV | |||
kFF | PWM feedforward gain (VIN / VRAMP) | 5.5 V < VVIN < 100 V | 15 | V / V | ||
OVER CURRENT PROTECT (OCP) - VALLEY CURRENT LIMITING | ||||||
IRS | ILIM source current, RSENSE Mode | Low voltage detected at ILIM | 100 | µA | ||
IRDSON | ILIM source current, RDS-ON mode | SW voltage detected at ILIM , TJ = 25°C | 180 | 200 | 220 | µA |
IRSTC | ILIM current tempco | RDS-ON mode | 4500 | ppm/°C | ||
IRDSONTC | ILIM current tempco | RSENSE mode | 0 | ppm/°C | ||
VILIM-TH | ILIM comparator threshold at ILIM | –8 | –2 | 3.5 | mV | |
SHORT CIRCUIT PROTECTION (SCP) - DUTY CYCLE CLAMP | ||||||
VCLAMP-OS | Clamp offset voltage - No current limiting | COMP to duty cycle clamp voltage | 0.2 + VVIN/75 | V | ||
VCLAMP-MIN | Minimum duty cycle clamp voltage | Clamp voltage with continuous OCP | 0.3 + VVIN/150 | V | ||
HICCUP MODE FAULT PROTECTION | ||||||
CHICC-DEL | Hiccup mode activation delay | Clock cycles with current limiting before off-time activated | 128 | cycles | ||
CHICCUP | Hiccup mode off time after activation | Clock cycles with no switching followed by SS/TRK release | 8192 | cycles | ||
DIODE EMULATION / DCM OPERATION | ||||||
VZCD-SS | Zero-cross detect (ZCD) soft-start ramp | ZCD threshold measured at SW pin 50 cycles after first HO pulse | 0 | mV | ||
VZCD-DIS | Zero-cross detect disable threshold | ZCD threshold measured at SW pin 1000 cycles after first HO pulse | 200 | mV | ||
VDEM-TH | Diode emulation zero-cross threshold | Measured at SW with VSW rising | 0 | mV | ||
THERMAL SHUTDOWN | ||||||
TSD | Thermal shutdown threshold | TJ rising | 175 | °C | ||
TSD-HYS | Thermal shutdown hysteresis | 20 | °C | |||
Switching Characteristics | ||||||
THO-TR, TLO-TR | HO, LO rise times | VBST-VSW =7 V, CLOAD =1 nF, 20% to 80% | 7 | ns | ||
THO-TF, TLO-TF | HO, fall times | VBST -VSW =7 V, CLOAD =1 nF, 20% to 80% | 4 | ns | ||
THO-DT | HO turnon dead time | VBST - VSW =7 V, LO off to HO on, 50% to 50% | 14 | ns |