JAJSST7A January 2024 – May 2024 MCF8315C-Q1
PRODUCTION DATA
The MCF8315C-Q1 consists of integrated 240mΩ/250mΩ/265mΩ (combined high-side and low-side FETs' on-state resistance) NMOS FETs connected in a three-phase bridge configuration. A doubler charge pump provides the proper gate-bias voltage to the high-side NMOS FETs across a wide operating voltage range in addition to providing 100% duty-cycle support. An internal linear regulator provides the gate-bias voltage for the low-side MOSFETs.