JAJSPH3I July   2003  – January 2023 SN65HVD1176 , SN75HVD1176

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Supply Current
    7. 6.7 Power Dissipation
    8. 6.8 Switching Characteristics
    9. 6.9 Typical Characteristics
      1.      Parameter Measurement Information
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Data Rate and Bus Length
        2. 8.2.1.2 Stub Length
        3. 8.2.1.3 Bus Loading
        4. 8.2.1.4 Receiver Failsafe
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 サード・パーティ製品に関する免責事項
    2. 11.2 Documentation Support
    3. 11.3 Related Links
    4. 11.4 サポート・リソース
    5. 11.5 Trademarks
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 用語集
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.3 Feature Description

Internal ESD protection circuits protect the transceiver bus terminals against ±10-kV Human Body Model (HBM) electrostatic discharges and all other pins up to ±4 kV.

The SN65HVD1176 device provides internal biasing of the receiver input thresholds for open-circuit, bus-idle, or short-circuit failsafe conditions, and a typical receiver hysteresis of 40 mV.