JAJSKA9M January   2003  – August 2022 SN74LVC1G3157

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Analog Switch Characteristics
    7. 6.7 Switching Characteristics 85°C
    8. 6.8 Switching Characteristics 125°C
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 サポート・リソース
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSVCCTA = -40 to 85°CTA = -40 to 125°CUNIT
MINTYP(1)MAXMINTYP(1)MAX
ronON-state switch resistance(2)See Figure 6-1 and Figure 7-1VI = 0 VIO = 4 mA1.65 V11201120Ω
VI = 1.65 VIO = –4 mA15501550
VI = 0 VIO = 8 mA2.3 V812812
VI = 2.3 VIO = –8 mA11301130
VI = 0 VIO = 24 mA3 V7979
VI = 3 VIO = –24 mA920920
VI = 0 VIO = 30 mA4.5 V6767
VI = 2.4 VIO = –30 mA712712
VI = 4.5 VIO = –30 mA715715
rrangeON-state switch resistance over signal range(2)(3)0 ≤ VBn ≤ VCC
(see Figure 6-1 and Figure 7-1)		IA = –4 mA1.65 V140140Ω
IA = –8 mA2.3 V4545
IA = –24 mA3 V1818
IA = –30 mA4.5 V1010
ΔronDifference of ON-state
resistance between switches(2)(4)(5)		See Figure 7-1VBn = 1.15 VIA = –4 mA1.65 V0.50.5Ω
VBn = 1.6 VIA = –8 mA2.3 V0.10.3
VBn = 2.1 VIA = –24 mA3 V0.10.3
VBn = 3.15 VIA = –30 mA4.5 V0.10.2
ron(flat)ON resistance flatness(2)(4)(6)0 ≤ VBn ≤ VCCIA = –4 mA1.65 V110110Ω
IA = –8 mA2.3 V2640
IA = –24 mA3 V910
IA = –30 mA4.5 V45
Ioff(7)OFF-state switch leakage current0 ≤ VI, VO ≤ VCC
(see Figure 7-2 )		1.65 V to
5.5 V		±1±1µA
±0.05±0.1(1)±0.05±0.1
IS(on)ON-state switch leakage currentVI = VCC or GND, VO = Open
(see Figure 7-3)		5.5 V±1±1µA
±0.1(1)±0.1(1)
IINControl input current0 ≤ VIN  ≤ VCC0 V to 5.5 V±1±1µA
±0.05±0.1(1)±0.05±0.1
ICCSupply currentS = VCC or GND5.5 V11035µA
ΔICCSupply-current changeS = VCC – 0.6 V5.5 V500500µA
CiControl input capacitanceS5 V2.72.7pF
Cio(off)Switch input/output capacitanceBn5 V5.25.2pF
Cio(on)Switch input/output capacitanceBn5 V17.317.3pF
A17.317.3
(1) TA = 25°C
(2) Measured by the voltage drop between I/O pins at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages on the two (A or B) ports.
(3) Specified by design
(4) Δron = ron(max) – ron(min) measured at identical VCC, temperature, and voltage levels
(5) This parameter is characterized, but not production tested.
(6) Flatness is defined as the difference between the maximum and minimum values of on-state resistance over the specified range of conditions.
(7) Ioff is the same as IS(off) (off-state switch leakage current).