SLOSE88 December 2024 TAS6754-Q1
ADVANCE INFORMATION
The gate driver accepts the low-voltage PWM signal and level shifts it to drive a high-current, full-bridge, power-FET stage.
The device uses proprietary techniques to optimize EMI and audio performance. The gate driver power supply voltage, GVDD, is internally generated and a decoupling capacitor must be connected.
The full H-bridge output stages use only NMOS transistors. Therefore, bootstrap capacitors are required for the proper operation of the high side NMOS transistors for the OUT-xP sides. A 1-µF ceramic capacitor of quality X7R or better, rated appropriately for the applied voltages (including load dump voltages), must be connected from each output to the corresponding bootstrap input. The bootstrap capacitors connected between the BST pins and the corresponding output function as a floating power supply for the high-side N-channel power MOSFET gate drive circuitry. During each high-side switching cycle, the bootstrap capacitors hold the gate-to-source voltage high, keeping the high- side MOSFETs turned on.
The high-side FET gate driver of the OUT_xM side is supplied by a charge pump (CP) supply for all four channels. A 330 nF ceramic capacitor of quality X7R or better, rated appropriately for the applied voltages (including load dump voltages), must be connected from the CP pin to PVDD. Additionally, a similarly rated 100 nF ceramic capacitor must be connected from the CPC_TOP pin to the CPC_BOT pin.