JAJSPG4K september   2003  – april 2023 THS3091 , THS3095

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: VS = ±15 V
    6. 7.6 Electrical Characteristics: VS = ±5 V
    7. 7.7 Typical Characteristics: ±15 V
    8. 7.8 Typical Characteristics: ±5 V
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power-Down and Reference Pins Functionality
    4. 8.4 Device Functional Modes
      1. 8.4.1 Wideband, Noninverting Operation
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 PowerPAD Design Considerations
          1. 9.4.1.1.1 PowerPAD Layout Considerations
        2. 9.4.1.2 Power Dissipation and Thermal Considerations
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 ドキュメントの更新通知を受け取る方法
    4. 10.4 サポート・リソース
    5. 10.5 Trademarks
    6. 10.6 静電気放電に関する注意事項
    7. 10.7 用語集
  11. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.6 Electrical Characteristics: VS = ±5 V

at TA ≅ 25°C, RF = 1.15 kΩ, RL = 100 Ω, and G = 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
Small-signal bandwidth, –3 dB G = 1, RF = 1.78 kΩ,
VO = 200 mVPP		 DDA package 485 MHz
DGN package 435
G = 2, RF = 1.15 kΩ, VO = 200 mVPP 215
G = 5, RF = 1 kΩ, VO = 200 mVPP 160
G = 10, RF = 866 Ω, VO = 200 mVPP 160
0.1-dB bandwidth flatness VO = 200 mVPP 50 MHz
Large-signal bandwidth VO = 4 VPP 205 MHz
Slew rate (10% to 90% level) G = 2, VO= 5-V step, RF = 1.21 kΩ 1800 V/μs
G = 5, VO= 5-V step, RF = 1.21 kΩ 1700
Rise and fall time G = 2, VO = 5-V step, RF = 1.21 kΩ 2 ns
Settling time G = –2, VO = 2-VPP step to 0.1% 12.5 ns
to 0.01% 26
HARMONIC DISTORTION
2nd harmonic distortion VO = 2 VPP, f = 10 MHz RL = 100 Ω 74 dBc
RL = 1 kΩ 76
3rd harmonic distortion VO = 2 VPP, f = 10 MHz RL = 100 Ω 70 dBc
RL = 1 kΩ 75
Input voltage noise f > 10 kHz 1.1 nV/√Hz
Noninverting input current noise f > 10 kHz 15 pA/√Hz
Inverting input current noise f > 10 kHz 14 pA/√Hz
DC PERFORMANCE
Open-loop transimpedance VO = ±2.5 V, G = 1 TA = 25°C 250 1500 kΩ
TA= –40°C to +85°C 200
Input offset voltage VCM = 0 V TA = 25°C 0.6 2 mV
TA= –40°C to +85°C 3.5
Noninverting input bias current VCM = 0 V TA = 25°C 2 15 μA
TA= –40°C to +85°C 20
Inverting input bias current VCM = 0 V TA = 25°C 5 15 μA
TA= –40°C to +85°C 25 μA
Input offset current VCM = 0 V TA = 25°C 1.5 10 μA
TA= –40°C to +85°C 20
Average offset voltage drift VCM = 0 V, TA = –40°C to +85°C ±20 μV/°C
Average noninverting bias current drift VCM = 0 V, TA = –40°C to +85°C ±20 nA/°C
Average inverting bias current drift VCM = 0 V, TA = –40°C to +85°C ±95 nA/°C
Average offset current drift VCM = 0 V, TA = –40°C to +85°C ±90 nA/°C
INPUT CHARACTERISTICS
Common-mode input range TA = 25°C ±3.3 ±3.6 V
TA= –40°C to +85°C ±3
Common-mode rejection ratio VCM = ±2.0 V, VO = 0 V TA = 25°C 60 66 dB
TA= –40°C to +85°C 57
Noninverting input resistance 0.45 MΩ
Noninverting input capacitance 2.6 pF
Inverting input resistance 32 Ω
Inverting input capacitance 1.5 pF
OUTPUT CHARACTERISTICS
Output voltage swing RL = 1 kΩ TA = 25°C ±3.1 ±3.4 V
TA= –40°C to +85°C ±2.8
Output voltage swing RL = 100 Ω TA = 25°C ±2.7 ±3.1
TA= –40°C to +85°C ±2.5
Output current Sourcing, RL = 10 Ω TA = 25°C 140 250 mA
TA= –40°C to +85°C 120
Sinking, RL = 10 Ω TA = 25°C –140 –250
TA= –40°C to +85°C –120
Output impedance f = 1 MHz, closed loop 0.09 Ω
POWER SUPPLY
Quiescent current TA = 25°C 7 8.2 9 mA
TA= –40°C to +85°C 6.5 9.5
Power supply rejection +PSRR TA = 25°C 68 81 dB
TA= –40°C to +85°C 63
–PSRR TA = 25°C 65 79
TA= –40°C to +85°C 60
POWER-DOWN CHARACTERISTICS (THS3095 ONLY)
REF voltage range(1) VS– VS+ – 4 V
Power-down voltage level(1) Enable PD ≥ REF+2 V
Disable PD ≤ REF+0.8
Power-down quiescent current PD = 0 V TA = 25°C 300 500 μA
TA= –40°C to +85°C 600
PD bias current PD = 0 V, REF = 0 V, TA = 25°C 11 15 μA
TA–40°C to +85°C 20
PD = 3.3 V, REF = 0 V TA = 25°C 11 15
TA= –40°C to +85°C 20
Turn-on time delay 90% of final value 60 μs
Turn-off time delay 10% of final value 150 μs
(1) For detailed information on the behavior of the power-down circuit, see Section 8.3.1.