JAJSGH1C November   2018  – March 2019 THVD1419 , THVD1429

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      THVD1419とTHVD1429のブロック図
  4. 4 改訂履歴
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 ESD Ratings [IEC]
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Power Dissipation
    7. 7.7 Electrical Characteristics
    8. 7.8 Switching Characteristics
    9. 7.9 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagrams
    3. 9.3 Feature Description
      1. 9.3.1 Electrostatic Discharge (ESD) Protection
      2. 9.3.2 Electrical Fast Transient (EFT) Protection
      3. 9.3.3 Surge Protection
      4. 9.3.4 Failsafe Receiver
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 Data Rate and Bus Length
        2. 10.2.1.2 Stub Length
        3. 10.2.1.3 Bus Loading
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 デバイス・サポート
    2. 13.2 デベロッパー・ネットワークの製品に関する免責事項
    3. 13.3 関連リンク
    4. 13.4 ドキュメントの更新通知を受け取る方法
    5. 13.5 コミュニティ・リソース
    6. 13.6 商標
    7. 13.7 静電気放電に関する注意事項
    8. 13.8 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

9.3.1 Electrostatic Discharge (ESD) Protection

The bus pins of the THVD14x9 transceiver family include on-chip ESD protection against ±16-kV HBM and ±8-kV IEC 61000-4-2 contact discharge. The International Electrotechnical Commission (IEC) ESD test is far more severe than the HBM ESD test. The 50% higher charge capacitance, C(S), and 78% lower discharge resistance, R(D), of the IEC model produce significantly higher discharge currents than the HBM model. As stated in the IEC 61000-4-2 standard, contact discharge is the preferred transient protection test method.

THVD1419 THVD1429 HBM_app_sllsei9.gifFigure 19. HBM and IEC ESD Models and Currents in Comparison (HBM Values in Parenthesis)

The on-chip implementation of IEC ESD protection significantly increases the robustness of equipment. Common discharge events occur because of human contact with connectors and cables.