JAJSO82 January   2024 THVD9491-SEP

ADVANCE INFORMATION  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 ESD Ratings [IEC]
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Power Dissipation
    7. 5.7 Electrical Characteristics
    8. 5.8 Switching Characteristics: 20Mbps
    9. 5.9 Switching Characteristics: 50Mbps
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 ±70-V Fault Protection
      2. 7.3.2 Integrated IEC ESD and EFT Protection
      3. 7.3.3 Driver Overvoltage and Overcurrent Protection
      4. 7.3.4 Enhanced Receiver Noise Immunity
      5. 7.3.5 Receiver Fail-Safe Operation
      6. 7.3.6 Low-Power Shutdown Mode
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Data Rate and Bus Length
        2. 8.2.1.2 Stub Length
        3. 8.2.1.3 Bus Loading
        4. 8.2.1.4 Transient Protection
      2. 8.2.2 Detailed Design Procedure
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
    2. 9.2 ドキュメントの更新通知を受け取る方法
    3. 9.3 サポート・リソース
    4. 9.4 Trademarks
    5. 9.5 静電気放電に関する注意事項
    6. 9.6 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information
    2. 11.2 Mechanical Data

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.3.2 Integrated IEC ESD and EFT Protection

Internal ESD protection circuits protect the transceivers against electrostatic discharges (ESD) according to IEC 61000-4-2 of up to ±8kV and against electrical fast transients (EFT) according to IEC 61000-4-4 of up to ±4kV. The integrated ESD structures help to limit voltage excursions and recover from them quickly that they allow EFT Criterion A at the system level (no data loss when transient noise is present).