SLVS641B April   2008  – March  2015 TL4242

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Input
      2. 7.3.2 ST Output
        1. 7.3.2.1 Function and Timing Diagram
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input Supply Voltage
      2. 8.1.2 Power Dissipation in TL4242
      3. 8.1.3 Setting the Output Current
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Voltage
        2. 8.2.2.2 Shunt Resistor
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage(2) –42 45 V
VI Input voltage D –0.3 7 V
PWM –40 40
REF –1 16
VO Output voltage Q –1 41 V
ST –0.3 40
IO Output current PWM ±1 mA
REF ±2
ST ±5
TJ Virtual-junction temperature –40 150 °C
Tstg Storage temperature –50 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN MAX UNIT
VCC Supply voltage 4.5 42 V
VST Status (ST) output voltage 16 V
VPWM PWM voltage 0 40 V
CD Status delay (D) capacitance 0 2.2 μF
RREF Reference (REF) resistor 0 10 Ω
TJ Virtual-junction temperature –40 150 °C

6.4 Thermal Information

THERMAL METRIC(1) TL4242 UNIT
DRJ (WSON)
8 PINS
RθJA Junction-to-ambient thermal resistance 39.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 31.5
RθJB Junction-to-board thermal resistance 15.5
ψJT Junction-to-top characterization parameter 0.3
ψJB Junction-to-board characterization parameter 15.6
RθJC(bot) Junction-to-case (bottom) thermal resistance 1.8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over recommended operating free-air temperature range, VI = 13.5 V, RREF = 0.47 Ω, VPWM,H, TJ = –40°C to 150°C, all voltages with respect to ground (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IqL Supply current VQ = 6.6 V 12 22 mA
IqOFF Supply current, off mode PWM = L, TJ < 85°C 0.1 2 μA
OUTPUT ELECTRICAL CHARACTERISTICS
IQ Output current VQ – VREF(1) = 6.6 V 357 376 395 mA
VQ – VREF = 6.6 V, RREF = 1 Ω 168 177 185
VQ – VREF = 6.6 V, RREF = 0.39 Ω 431 454 476
VQ – VREF = 5.4 V to 7.8 V, VI = 9 V to 16 V 357 376 395
IQmax Output current limit RREF = 0 Ω 600 mA
Vdr Drop voltage IQ = 300 mA 0.35 0.7 V
PWM INPUT ELECTRICAL CHARACTERISTICS
VPWM,H High-level PWM voltage 2.6 V
VPWM,L Low-level PWM voltage 0.7 V
IPWM,H High-level PWM input current VPWM = 5 V 220 500 μA
IPWM,L Low-level PWM input current VPWM = 0 V –1 1 μA
tPWM,ON Delay time, turn on 70% of IQnom, See Figure 5 0 15 40 μs
tPWM,OFF Delay time, turn off 30% of IQnom, See Figure 5 0 15 40 μs
REFERENCE (REF) ELECTRICAL CHARACTERISTICS
VREF Reference voltage RREF = 0.39 Ω to 1 Ω 168 177 185 mV
IREF Reference input current VREF = 180 mV –1 0.1 1 μA
STATUS OUTPUT (ST) ELECTRICAL CHARACTERISTICS
VIQL Lower status-switching threshold ST = L 15 25 mV
VIQH Upper status-switching threshold ST = H 30 40 mV
VSTL Low-level status voltage IST = 1.5 mA 0.4 V
ISTLK Leakage current VST = 5 V 5 μA
STATUS DELAY (D) ELECTRICAL CHARACTERISTICS
tSTHL Delay time, status reaction CD = 47 nF, ST H→L 6 10 14 ms
tSTLH Delay time, status release CD = 47 nF, ST L→H 10 20 μs
(1) VQ  – VREF equals the forward voltage sum of the connected LEDs (see Figure 3).

6.6 Typical Characteristics

TL4242 g_iout_rref_lvs641.gif
Figure 1. Output Current vs External Resistor
TL4242 g_vref_temp_lvs641.gif
Figure 3. Reference Voltage vs Junction Temperature
TL4242 g_iout_vcc_lvs641.gif
Figure 2. Output Current vs Supply Voltage
TL4242 g_ipwm_vpwm_lvs641.gif
Figure 4. PWM Pin Input Current vs PWM Voltage