JAJSGI5D November 2018 – June 2022 TLIN1441-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RXD OUTPUT TERMINAL (OPEN DRAIN) | ||||||
VOL | Output low voltage | Based upon a 2 kΩ to 10 kΩ external pull-up to VCC | 0.2 | VCC | ||
IOL | Low level output current, open drain | LIN = 0 V, RXD = 0.4 V | 1.5 | mA | ||
ILKG | Leakage current, high-level | LIN = VSUP, RXD = VCC | –5 | 0 | 5 | µA |
TXD INPUT TERMINAL | ||||||
VIL | Low level input voltage | –0.3 | 0.8 | V | ||
VIH | High level input voltage | 2 | 5.5 | V | ||
IIH | High level input leakage current | TXD = high | –5 | 0 | 5 | µA |
RTXD | Internal pull-up resistor value | 125 | 350 | 800 | kΩ | |
LIN TERMINAL (REFERENCED TO VSUP) | ||||||
VOH | HIGH level output voltage | LIN recessive, TXD = high, IO = 0 mA, VSUP = 5.5 V to 36 V | 0.85 | VSUP | ||
VOL | LOW level output voltage | LIN dominant, TXD = low, VSUP = 5.5 V to 36 V | 0.2 | VSUP | ||
VSUP_NON_OP | VSUP where impact of recessive LIN bus < 5% (ISO/DIS 17987 Param 11) | TXD & RXD open VLIN = 5.5 V to 45 V | –0.3 | 45 | V | |
IBUS_LIM | Limiting current (ISO/DIS 17987 Param 12) | TXD = 0 V,
VLIN = 36 V, RMEAS = 440 Ω,
VSUP = 36 V, VBUSdom < 4.518 V; Figure 8-6 |
40 | 90 | 200 | mA |
IBUS_PAS_dom | Receiver leakage current, dominant (ISO/DIS 17987 Param 13) | VLIN = 0 V, VSUP = 12 V Driver off/recessive; Figure 8-7 | –1 | mA | ||
IBUS_PAS_rec1 | Receiver leakage current, recessive (ISO/DIS 17987 Param 14) | VLIN ≥ VSUP, 5.5 V ≤ VSUP ≤ 36 V Driver off; Figure 8-8 | 20 | µA | ||
IBUS_PAS_rec2 | Receiver leakage current, recessive (ISO/DIS 17987 Param 14) | VLIN = VSUP, Driver off; Figure 8-8 | –5 | 5 | µA | |
IBUS_NO_GND | Leakage current, loss of ground (ISO/DIS 17987 Param 15) | GND = VSUP, VSUP = 12 V, 0 V ≤ VLIN ≤ 28 V; Figure 8-9 | –1 | 1 | mA | |
IBUS_NO_BAT | Leakage current, loss of supply (ISO/DIS 17987 Param 16) | 0 V ≤ VLIN ≤ 28 V, VSUP = GND; Figure 8-10 | 10 | µA | ||
VBUSdom | Low level input voltage (ISO/DIS 17987 Param 17) | LIN dominant (including LIN dominant for wake up); Figure 8-3, Figure 8-4 | 0.4 | VSUP | ||
VBUSrec | High level input voltage (ISO/DIS 17987 Param 18) | LIN recessive; Figure 8-3, Figure 8-8 | 0.6 | VSUP | ||
VBUS_CNT | Receiver center threshold (ISO/DIS 17987 Param 19) | VBUS_CNT = (VIL + VIH)/2; Figure 8-3, Figure 8-8 | 0.475 | 0.5 | 0.525 | VSUP |
VHYS | Hysteresis voltage (ISO/DIS 17987 Param 20) | VHYS = (VIL - VIH); Figure 8-3, Figure 8-8 | 0.175 | VSUP | ||
VSERIAL_DIODE | Serial diode LIN term pull-up path (ISO/DIS 17987 Param 21) | By design and characterization | 0.4 | 0.7 | 1.0 | V |
RResponder | Pull-up resistor to VSUP (ISO/DIS 17987 Param 26) | Normal and Standby modes | 20 | 45 | 60 | kΩ |
IRSLEEP | Pull-up current source to VSUP | Sleep mode, VSUP = 12 V, LIN = GND | –20 | –2 | µA | |
CLIN,PIN | Capacitance of the LIN pin | By design and characterization | 45 | pF | ||
EN INPUT TERMINAL | ||||||
VIH | High level input voltage | 2 | 5.5 | V | ||
VIL | Low level input voltage | 0.8 | V | |||
VHYS | Hysteresis voltage | By design and characterization | 30 | 500 | mV | |
IIL | Low level input current | EN = Low | –8 | 8 | µA | |
REN | Internal pull-down resistor | 125 | 350 | 800 | kΩ | |
LIMP OUTPUT TERMINAL (HIGH VOLTAGE OPEN DRAIN OUTPUT) | ||||||
ΔVH | High level voltage drop LIMP with respect to VSUP | ILIMP = - 0.5 mA | 0.5 | 1 | V | |
ILKG(LIMP) | Leakage current | LIMP = 0 V, Sleep Mode | –0.5 | 0.5 | µA | |
WAKE INPUT TERMINAL | ||||||
VIH | High-level input voltage | Selective Wake-up or Standby Mode, WAKE pin enabled | VSUP – 2 | V | ||
VIL | Low-level input voltage | Selective Wake-up or Standby Mode, WAKE pin enabled | VSUP – 3 | V | ||
IIH | High-level input leakage current | WAKE = VSUP - 1 V | –25 | –15 | µA | |
IIL | Ligh-level input leakage current | WAKE = 1 V | 15 | 25 | µA | |
tWAKE | WAKE hold time | Wake up time from a wake edge on WAKE; Standby or Sleep mode | 5 | 50 | µs | |
WDI, SDI, SCK, nCS INPUT TERMINAL | ||||||
VIH | High-level input voltage | 2.19 | V | |||
VIL | Low-level input voltage | 0.8 | V | |||
IIH | High-level input leakage current | Inputs = VCC | –1 | 1 | µA | |
IIL | Low-level input leakage current | Inputs = 0 V, VCC = Active | –50 | -5 | µA | |
CIN | Input Capacitance | 4 MHz | 10 | 15 | pF | |
ILKG(OFF) | Unpowered leakage current | Inputs = 5.25/3.465 V, VCC = VSUP = 0 V | –1 | 1 | µA | |
WDT INPUT TERMINAL | ||||||
VIH | High-level input voltage | Inputs = VCC | 0.8 | VCC | ||
VIL | Low-level input voltage | Inputs = VCC | 0.2 | VCC | ||
VIM(WDT) | WDT Mid-level input voltage(1) | Inputs = VCC | 0.4 | 0.5 | 0.6 | VCC |
IIH | High-level input leakage current | Inputs = VCC | 2.5 | 25 | µA | |
IIL | Low-level input leakage current | Inputs = 0 V, VCC = Active | –25 | –2.5 | µA | |
ILKG(OFF) | Unpowered leakage current | Inputs = 5.25/3.465 V, VCC = VSUP = 0 V | –1 | 1 | µA | |
SDO OUTPUT TERMINAL | ||||||
VOH | High level output voltage | IO = 2 mA, VCC = Active | 0.8 | VCC | ||
VOL | Low level output voltage | IO = 2 mA, VCC = Active | 0.2 | VCC | ||
ILKG(OFF) | Unpowered leakage current | Outputs = 5.25/3.465 V, VCC = VSUP = 0 V | –1 | 1 | µA | |
nRST, nWDR (SPI Mode) TERMINAL (OPEN DRAIN OUTPUT) | ||||||
ILKG | Leakage current, high-level | LIN = VSUP, nRST = VCC | –5 | 5 | µA | |
VOL | Low-level output voltage | Based upon external pull up to VCC | 0.2 | VCC | ||
IOL | Low-level output current, open drain | LIN = 0 V, nRST = 0.4 V | 1.5 | mA | ||
nINT, nWDR (Pin Mode) TERMINAL (OPEN DRAIN OUTPUT) | ||||||
VOL | Low-level output voltage | 0.2 | VCC | |||
IOL | Low-level output current, open drain | LIN = 0 V, nINT = 0.4 V | 1.5 | mA | ||
ILKG | Leakage current, high-level | LIN = VSUP, nINT = VCC | –5 | 5 | µA | |
WDI, WDT TIMING and SWITCHING CHARACTERISTIC (RL = 1 MΩ, CL = 50 pF and TA = -40°C to 125°C) | ||||||
tW | WDI pulse width; see Figure 8-19 | Filter time to avoid false input | 30 | µs | ||
td | nWDR pulse width delay time that sets the lower window boundry starting point; see Figure 8-19 | Time from nWDR low to high | 2 | 4 | 6 | ms |
tWINDOW | Closed Window + Open Window; See Figure 8-19 | WDT = GND | 32 | 40 | 48 | ms |
WDT = VCC | 480 | 600 | 720 | ms | ||
WDT = Floating | 4.8 | 6 | 7.2 | s | ||
tWDOUT | Watchdog timeout window (Open Window); See Figure 8-19 | WDT = GND | 16 | 20 | 24 | ms |
WDT = VCC | 240 | 300 | 360 | ms | ||
WDT = Floating | 2.4 | 3 | 3.6 | s | ||
tPHL | Propagation delay time high to low level output (VCC to nWDR delay) | VCC = Active | 40 | 65 | µs | |
DUTY CYCLE CHARACTERISTICS(2) | ||||||
D112V | Duty Cycle 1 (ISO/DIS 17987 Param 27) | THREC(MAX) = 0.744 x VSUP, THDOM(MAX) = 0.581 x VSUP, VSUP = 5.5 V to 18 V, tBIT = 50 µs (20 kbps), D1 = tBUS_rec(min)/(2 x tBIT) (See Figure 8-11, Figure 8-12) |
0.396 | |||
D212V | Duty Cycle 2 (ISO/DIS 17987 Param 28) | THREC(MIN) = 0.422 x VSUP, THDOM(MIN) = 0.284 x VSUP, VSUP = 5.5 V to 18 V, tBIT = 50 µs (20 kbps), D2 = tBUS_rec(MAX)/(2 x tBIT) (See Figure 8-11, Figure 8-12) |
0.581 | |||
D312V | Duty Cycle 3 (ISO/DIS 17987 Param 29) | THREC(MAX) = 0.778 x VSUP,
THDOM(MAX) = 0.616 x VSUP, VSUP = 5.5 V to 18 V, tBIT = 96 µs (10.4 kbps), D3 = tBUS_rec(min)/(2 x tBIT) (See Figure 8-11, Figure 8-12) |
0.417 | |||
D412V | Duty Cycle 4 (ISO/DIS 17987 Param 30) | THREC(MIN) = 0.389 x VSUP, THDOM(MIN) = 0.251 x VSUP, VSUP = 5.5 V to 18 V, tBIT = 96 µs (10.4 kbps), D4 = tBUS_rec(MAX)/(2 x tBIT) (See Figure 8-11, Figure 8-12) |
0.59 |