JAJSE11B November   2015  – September 2017 TLV1701-Q1 , TLV1702-Q1 , TLV1704-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 改訂履歴
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Comparator Inputs
    4. 8.4 Device Functional Modes
      1. 8.4.1 Setting Reference Voltage
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
      1. 12.1.1 関連資料
    2. 12.2 関連リンク
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage 40 (±20) V
Signal input pins Voltage(2) (VS–) – 0.5 (VS+) + 0.5 V
Current(2) ±10 mA
Output short-circuit(3) Continuous mA
Operating temperature –55 150 °C
Junction temperature, TJ 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails must be current limited to 10 mA or less.
(3) Short-circuit to ground; one comparator per package.

7.2 ESD Ratings

VALUE UNIT
TLV1701-Q1
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
TLV1702-Q1
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±1000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
TLV1704-Q1
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±1000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage VS = (VS+) – (VS–) 2.2 (±1.1) 36 (±18) V
Specified temperature –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 UNIT
DBV (SOT-23) DGK (VSSOP) PW (TSSOP)
5 PINS 8 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 233.1 199 128.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 156.4 89.5 56.5 °C/W
RθJB Junction-to-board thermal resistance 60.6 120.4 69.9 °C/W
ψJT Junction-to-top characterization parameter 35.7 22 9.1 °C/W
ψJB Junction-to-board characterization parameter 59.7 118.7 69.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

at TA = 25°C, VS = 2.2 V to 36 V, CL = 15 pF, RPULLUP = 5.1 kΩ, VCM = VS / 2, and VS = VPULLUP (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage TA = 25°C, VS = 2.2 V ±0.5 ±3.5 mV
TA = 25°C, VS = 36 V ±0.3 ±2.5 mV
TA = –40°C to +125°C ±5.5 mV
TA = 25°C, VS = 36 V, TLV1701-Q1 Only ±0.4 ±3.2
TA = –40°C to +125°C, TLV1701-Q1 Only ±6.3
dVOS/dT Input offset voltage drift TA = –40°C to +125°C ±4 ±20 μV/°C
PSRR Power-supply rejection ratio TA = 25°C 15 100 μV/V
TA = –40°C to +125°C 20 μV/V
INPUT VOLTAGE RANGE
VCM Common-mode voltage range TA = –40°C to +125°C (V–) (V+) V
INPUT BIAS CURRENT
IB Input bias current TA = 25°C 5 15 nA
TA = –40°C to +125°C 20 nA
IOS Input offset current 0.5 nA
CLOAD Capacitive load drive See Typical Characteristics
OUTPUT
VO Voltage output swing from rail IO ≤ 4 mA, input overdrive = 100 mV,
VS = 36 V		 900 mV
IO = 0 mA, input overdrive = 100 mV,
VS = 36 V		 600 mV
ISC Short circuit sink current 20 mA
Output leakage current VIN+ > VIN– 70 nA
POWER SUPPLY
VS Specified voltage range 2.2 36 V
IQ Quiescent current (per channel) IO = 0 A 55 75 μA
IO = 0 A, TA = –40°C to +125°C 100 μA

7.6 Switching Characteristics

at TA = 25°C, VS = +2.2 V to +36 V, CL = 15 pF, RPULLUP = 5.1 kΩ, VCM = VS / 2, and VS = VPULLUP (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tpHL Propagation delay time, high-to-low Input overdrive = 100 mV 460 ns
tpLH Propagation delay time, low-to-high Input overdrive = 100 mV 560 ns
tR Rise time Input overdrive = 100 mV 365 ns
tF Fall time Input overdrive = 100 mV 240 ns

7.7 Typical Characteristics

at TA = 25°C, VS = 5 V, RPULLUP = 5.1 kΩ, and input overdrive = 100 mV (unless otherwise noted)
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 C017_SBOS589.png
Figure 1. Quiescent Current vs Temperature
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 C014_SBOS589.png
Figure 3. Input Offset Current vs Temperature
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 D003_SLOS890.gif
VS = ±18 V 14 typical units shown
Figure 5. Offset Voltage vs Common-Mode Voltage
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 D001_SLOS890.gif
16 typical units shown
Figure 7. Offset Voltage vs Supply Voltage
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 C006_SBOS589.png
Figure 9. Propagation Delay vs Capacitive Load
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 C007_SBOS589.png
VS = 36 V Overdrive = 100 mV
Figure 11. Propagation Delay (TpLH)
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 C009_SBOS589.png
VS = 2.2 V Overdrive = 100 mV
Figure 13. Propagation Delay (TpLH)
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 D005_SLOS890.gif
VS = ±18 V Distribution taken from 2524 comparators
Figure 15. Offset Voltage Production Distribution
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 C016_SBOS589.png
Sink current
Figure 17. Short-Circuit Current vs Supply Voltage
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 C015_SBOS589.png
Figure 2. Input Bias Current vs Temperature
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 C011_SBOS589.png
Figure 4. Output Voltage vs Output Current
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 D002_SLOS890.gif
VS = 2.2 V 13 typical units shown
Figure 6. Offset Voltage vs Common-Mode Voltage
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 C013_SBOS589.png
Figure 8. Propagation Delay vs Input Overdrive
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 C012_SBOS589.png
VOD = 100 mV
Figure 10. Propagation Delay vs Temperature
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 C008_SBOS589.png
VS = 36 V Overdrive = 100 mV
Figure 12. Propagation Delay (TpHL)
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 C010_SBOS589.png
VS = 2.2 V Overdrive = 100 mV
Figure 14. Propagation Delay (TpHL)
TLV1701-Q1 TLV1702-Q1 TLV1704-Q1 D004_SLOS890.gif
VS = 2.2 V Distribution taken from 2524 comparators
Figure 16. Offset Voltage Production Distribution