SNOSDG0 August   2024 TLV1H103-SEP

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Diagrams
    7. 5.7 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
    4. 6.4 Device Functional Modes
      1. 6.4.1 Inputs
      2. 6.4.2 Push-Pull (Single-Ended) Output
      3. 6.4.3 Known Startup Condition
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Adjustable Hysteresis
      2. 7.1.2 Capacitive Loads
      3. 7.1.3 Latch Functionality
    2. 7.2 Typical Application
      1. 7.2.1 Implementing Adjustable Hystseresis
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
      2. 7.2.2 Optical Receiver
      3. 7.2.3 Over-Current Latch Condition
      4. 7.2.4 External Trigger Function
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Documentation Support
    1. 8.1 Related Documentation
      1. 8.1.1 Development Support
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Electrostatic Discharge Caution

TLV1H103-SEP This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.