JAJSVN8 November   2024 TLV61220A

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
    1.     Pin Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Controller Circuit
        1. 8.3.1.1 Startup
        2. 8.3.1.2 Operation at Output Overload
        3. 8.3.1.3 Undervoltage Lockout
        4. 8.3.1.4 Overvoltage Protection
        5. 8.3.1.5 Overtemperature Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Enable and Shutdown Mode
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Adjustable Output Voltage Version
        2. 9.2.2.2 Inductor Selection
        3. 9.2.2.3 Capacitor Selection
          1. 9.2.2.3.1 Input Capacitor
          2. 9.2.2.3.2 Output Capacitor
      3. 9.2.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  13. 12Device and Documentation Support
    1. 12.1 サード・パーティ製品に関する免責事項
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 サポート・リソース
    5. 12.5 Trademarks
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 用語集
  14. 13Revision History
  15.   Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.1 Overview

The TLV61220A is a high performance, highly efficient boost converter. To achieve high efficiency the power stage is realized as a synchronous boost topology. For the power switching two actively controlled low RDS(on) power MOSFETs are implemented.