JAJSC84F May   2016  – January 2020 TPA3136AD2 , TPA3136D2

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
    1.     Pin Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Switching Characteristics
    7. 8.7 Typical Characteristics
  9. 9 Parameter Measurement Information
  10. 10Detailed Description
    1. 10.1 Overview
    2. 10.2 Functional Block Diagram
    3. 10.3 Feature Description
      1. 10.3.1 Fixed Analog Gain
      2. 10.3.2 SD Operation
      3. 10.3.3 PLIMIT
      4. 10.3.4 Spread Spectrum and De-Phase Control
      5. 10.3.5 GVDD Supply
      6. 10.3.6 DC Detect
      7. 10.3.7 PBTL Select
      8. 10.3.8 Short-Circuit Protection and Automatic Recovery Feature
      9. 10.3.9 Thermal Protection
    4. 10.4 Device Functional Modes
  11. 11Application and Implementation
    1. 11.1 Application Information
    2. 11.2 Typical Applications
      1. 11.2.1 Design Requirements
        1. 11.2.1.1 PCB Material Recommendation
        2. 11.2.1.2 PVCC Capacitor Recommendation
        3. 11.2.1.3 Decoupling Capacitor Recommendations
      2. 11.2.2 Detailed Design Procedure
        1. 11.2.2.1 Ferrite Bead Filter Considerations
        2. 11.2.2.2 Efficiency: LC Filter Required with the Traditional Class-D Modulation Scheme
        3. 11.2.2.3 When to Use an Output Filter for EMI Suppression
        4. 11.2.2.4 Input Resistance
        5. 11.2.2.5 Input Capacitor, Ci
        6. 11.2.2.6 BSN and BSP Capacitors
        7. 11.2.2.7 Differential Inputs
        8. 11.2.2.8 Using Low-ESR Capacitors
      3. 11.2.3 Application Performance Curves
        1. 11.2.3.1 EN55013 Radiated Emissions Results
        2. 11.2.3.2 EN55022 Conducted Emissions Results
  12. 12Power Supply Recommendations
    1. 12.1 Power Supply Decoupling, CS
  13. 13Layout
    1. 13.1 Layout Guidelines
    2. 13.2 Layout Example
  14. 14デバイスおよびドキュメントのサポート
    1. 14.1 デバイス・サポート
      1. 14.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 14.2 ドキュメントのサポート
      1. 14.2.1 関連資料
    3. 14.3 関連リンク
    4. 14.4 ドキュメントの更新通知を受け取る方法
    5. 14.5 サポート・リソース
    6. 14.6 商標
    7. 14.7 静電気放電に関する注意事項
    8. 14.8 Glossary
  15. 15メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11.2.2.6 BSN and BSP Capacitors

The full H-bridge output stages use only NMOS transistors. Therefore, they require bootstrap capacitors for the high side of each output to turn on correctly. A 0.22-μF ceramic capacitor, rated for at least 25 V, must be connected from each output to its corresponding bootstrap input. Specifically, one 0.22-μF capacitor must be connected from OUTPx to BSPx, and one 0.22-μF capacitor must be connected from OUTNx to BSNx. (See the application circuit diagram in Figure 18.)

The bootstrap capacitors connected between the BSxx pins and corresponding output function as a floating power supply for the high-side N-channel power MOSFET gate drive circuitry. During each high-side switching cycle, the bootstrap capacitors hold the gate-to-source voltage high enough to keep the high-side MOSFETs turned on.