SLOS429C May   2004  – May 2016 TPA6204A1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: TA = 25°C
    6. 7.6 Operating Characteristics: TA = 25°C, Gain = 1 V/V
    7. 7.7 Dissipation Ratings
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Advantages of Fully Differential Amplifiers
      2. 9.3.2 Fully Differential Amplifier Efficiency and Thermal Information
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Selecting Components for Resistors (RI)
        2. 10.2.2.2 Using Low-ESR Capacitors
          1. 10.2.2.2.1 Bypass Capacitor (C(BYPASS)) and Start-Up Time
          2. 10.2.2.2.2 Input Capacitor (CI)
          3. 10.2.2.2.3 Decoupling Capacitor (CS)
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
  11. 11Power Supply Recommendations
    1. 11.1 Power Supply Decoupling Capacitor
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Community Resources
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DRB|8
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage, VDD –0.3 6 V
Input voltage, VI –0.3 VDD + 0.3 V
Continuous total power dissipation See Dissipation Ratings
Operating free-air temperature, TA –40 85 °C
Junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply voltage, VDD 2.5 5.5 V
High-level input voltage, VIH SHUTDOWN 1.55 V
Low-level input voltage, VIL SHUTDOWN 0.5 V
Operating free-air temperature, TA –40 85 °C

7.4 Thermal Information

THERMAL METRIC(1) TPA6204A1 UNIT
DRB (SON)
8 PINS
RθJA Junction-to-ambient thermal resistance 50.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 69.2 °C/W
RθJB Junction-to-board thermal resistance 25.5 °C/W
ψJT Junction-to-top characterization parameter 1.8 °C/W
ψJB Junction-to-board characterization parameter 25.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 6.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics: TA = 25°C

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOS Output offset voltage (measured differentially) VI = 0 V differential, Gain = 1 V/V, VDD = 5.5 V –9 0.3 9 mV
PSRR Power supply rejection ratio VDD = 2.5 V to 5.5 V –85 –60 dB
VIC Common mode input range VDD = 2.5 V to 5.5 V 0.5 VDD – 0.8 V
CMRR Common mode rejection ratio VDD = 5.5 V, VIC = 0.5 V to 4.7 V –63 –40 dB
VDD = 2.5 V, VIC = 0.5 V to 1.7 V –63 –40
Low-output swing RL = 8 Ω, VIN+ = VDD, Gain = 1 V/V, VIN− = 0 V or VIN+ = 0 V,
VIN− = VDD		 VDD = 5.5 V 0.45 V
VDD = 3.6 V 0.37
VDD = 2.5 V 0.26 0.4
High-output swing RL = 8 Ω, VIN+ = VDD, Gain = 1 V/V, = 0 V or VIN− = VDD
VIN− VIN+ = 0 V		 VDD = 5.5 V 4.95 V
VDD = 3.6 V 3.18
VDD = 2.5 V 2 2.13
| IIH | High-level input current, SHUTDOWN VDD = 5.5 V, VI = 5.8 V 58 100 µA
| IIL | Low-level input current, SHUTDOWN VDD = 5.5 V, VI = −0.3 V 3 100 µA
IQ Quiescent current VDD = 2.5 V to 5.5 V, no load 4 6 mA
I(SD) Supply current V(SHUTDOWN) ≤ 0.5 V, VDD = 2.5 V to 5.5 V,
RL = 8 Ω		 0.01 1 µA
Gain RL = 8 Ω 38 kΩ / RI 40 kΩ / RI 42 kΩ / RI V/V
Resistance from shutdown to GND 100 kΩ

7.6 Operating Characteristics: TA = 25°C, Gain = 1 V/V

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PO Output power THD + N = 1%, f = 1 kHz,
RL = 8 Ω		 VDD = 5.5 V 1.36 W
VDD = 3.6 V 0.72
VDD = 2.5 V 0.33
THD + N = 10%, f = 1 kHz, RL = 8 Ω VDD = 5.5 V 1.7 W
VDD = 3.6 V 0.85
VDD = 2.5 V 0.4
THD+N Total harmonic distortion + noise VDD = 5 V, PO = 1 W, RL = 8 Ω, f = 1 kHz 0.02%
VDD = 3.6 V, PO = 0.5 W, RL = 8 Ω, f = 1 kHz 0.02%
VDD = 2.5 V, PO = 200 mW, RL = 8 Ω, f = 1 kHz 0.03%
kSVR Supply ripple rejection ratio VDD = 3.6 V, Inputs
AC-grounded with Ci = 2 µF, V(RIPPLE) = 200 mVPP		 f = 217 Hz –80 dB
f = 20 Hz to 20 kHz –70
SNR Signal-to-noise ratio VDD = 5 V, PO = 1 W, RL = 8 Ω 105 dB
Vn Output voltage noise VDD = 3.6 V, f = 20 Hz to 20 kHz, Inputs AC-grounded with Ci = 2 μF No weighting 15 µVRMS
A weighting 12
CMRR Common-mode rejection ratio VDD = 3.6 V VIC = 1 VPP f = 217 Hz –65 dB
RF Feedback resistance 38 40 44 kΩ
Start-up time from shutdown VDD = 3.6 V, CBYPASS = 0.1 μF 27 ms

7.7 Dissipation Ratings

PACKAGE TA ≤ 25°C POWER RATINGS DERATING FACTOR TA = 70°C POWER RATINGS TA = 85°C POWER RATINGS
DRB 2.7 W 21.8 mW/°C 1.7 W 1.4 W

7.8 Typical Characteristics

Table 1. Table of Graphs

FIGURE
PO Output power vs Supply voltage Figure 1
vs Load resistance Figure 2
PD Power dissipation vs Output power Figure 3
THD+N Total harmonic distortion + noise vs Output power Figure 4
vs Frequency Figure 5
vs Common-mode input voltage Figure 6
KSVR Supply voltage rejection ratio vs Frequency Figure 7
GSM Power supply rejection vs Time Figure 8
GSM Power supply rejection vs Frequency Figure 9
Closed-loop gain/phase vs Frequency Figure 10
Open-loop gain/phase vs Frequency Figure 11
IDD Supply current vs Supply voltage Figure 12
vs Shutdown voltage Figure 13
Start-up time vs Bypass capacitor Figure 14
TPA6204A1 graph_01_slos429.gif Figure 1. Output Power vs Supply Voltage
TPA6204A1 graph_03_slos429.gif Figure 3. Power Dissipation vs Output Power
TPA6204A1 graph_05_slos429.gif Figure 5. Total Harmonic Distortion + Noise vs Output Power
TPA6204A1 graph_07_slos429.gif Figure 7. Supply Voltage Rejection Ratio vs Frequency
TPA6204A1 graph_09_slos429.gif Figure 9. GSM Power Supply Rejection vs Time
TPA6204A1 graph_11_slos429.gif Figure 11. Closed-Loop Gain/Phase vs Frequency
TPA6204A1 graph_13_slos429.gif Figure 13. Supply Current vs Supply Voltage
TPA6204A1 graph_02_slos429.gif Figure 2. Output Power vs Load Resistance
TPA6204A1 graph_04_slos429.gif Figure 4. Total Harmonic Distortion + Noise vs Common-Mode Input Voltage
TPA6204A1 graph_06_slos429.gif Figure 6. Total Harmonic Distortion + Noise vs Frequency
TPA6204A1 graph_08_slos429.gif Figure 8. GSM Power Supply Rejection vs Frequency
TPA6204A1 graph_10_slos429.gif Figure 10. Start-Up Time vs Bypass Capacitor
TPA6204A1 graph_12_slos429.gif Figure 12. Open-Loop Gain/Phase vs Frequency
TPA6204A1 graph_14_slos429.gif Figure 14. Supply Current vs Supply Voltage