SLVSDG9B March 2016 – December 2016 TPD1E0B04
PRODUCTION DATA.
The TPD1E0B04 device is a bidirectional ESD Protection Diode with ultra-low capacitance. This device can dissipate ESD strikes at the maximum level specified by the IEC 61000-4-2 International Standard (contact). The ultra-low capacitance makes this device ideal for protecting any super high-speed signal pins including Thunderbolt 3. The low capacitance allows for extremely low losses even at RF frequencies such as USB 3.1 Gen 2, Thunderbolt 3, or antenna applications.
The I/O pins can withstand ESD events up to ±8-kV contact and ±9-kV air gap. An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-Ω impedance). An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand surge events up to 1.7 A and 15 W (8/20 µs waveform). An ESD-surge clamp diverts this current to ground.
The capacitance between each I/O pin to ground is 0.13 pF (typical) and 0.15 pF (maximum). This device supports data rates in excess of 20 Gbps.
The DC breakdown voltage of each I/O pin is ±6.7 V (typical). This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of ±3.6 V.
The I/O pins feature an ultra-low leakage current of 10 nA (maximum) with a bias of ±2.5 V
The I/O pins feature an ESD clamp that is capable of clamping the voltage to 10.1 V (IPP = 5 A).
This device is capable of supporting high speed interfaces in excess of 20 Gbps, because of the extremely low IO capacitance.
This device features an industrial operating range of –40°C to +125°C.
The layout of this device makes it simple and easy to add protection to an existing layout. The package is offered in industry standard 0201 and 0402 footprints, requiring minimal modification to an existing layout.
The TPD1E0B04 device is a passive integrated circuit that triggers when voltages are above VBRF or below VBRR. During ESD events, voltages as high as ±9 kV (air) can be directed to ground via the internal diode network. When the voltages on the protected line fall below the trigger levels of TPD1E0B04 (usually within 10s of nano-seconds) the device reverts to passive.