JAJSDV1A June 2017 – September 2017 TPD4E02B04-Q1
PRODUCTION DATA.
The TPD4E02B04-Q1 is an automotive-qualified bidirectional ESD Protection Diode with ultra-low capacitance. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 (Level 4) International Standard. The ultra-low capacitance makes this device ideal for protecting any super high-speed signal pins.
This device is qualified to AEC-Q101 standards and is qualified to operate from –40°C to +125°C.
The I/O pins can withstand ESD events of at least ±10-kV contact and ±10-kV air gap according to the ISO 10605 (330 pF, 330 Ω) standard. The device diverts the current to ground.
The I/O pins can withstand ESD events up to ±12-kV contact and ±15-kV air gap. An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-Ω impedance). An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand surge events up to 2 A and 17 W (8/20 µs waveform). An ESD-surge clamp diverts this current to ground.
The capacitance between each I/O pin to ground is 0.25 pF (typical). This device supports data rates up to 10 Gbps.
The DC breakdown voltage of each I/O pin is a minimum of ±5.5 V. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of ±3.6 V.
The I/O pins feature an ultra-low leakage current of 10 nA (maximum) with a bias of ±2.5 V.
The I/O pins feature an ESD clamp that is capable of clamping the voltage to 8.8 V (IPP = 5 A).
This device is capable of supporting high speed interfaces up to 10 Gbps, because of the extremely low IO capacitance.
This device features an industrial operating range of –40°C to +125°C.
The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers flow-through routing, requiring minimal modification to an existing layout.
The TPD4E02B04-Q1 is a passive integrated circuit that triggers when voltages are above VBRF or below VBRR. During ESD events, voltages as high as ±15 kV (air) can be directed to ground via the internal diode network. When the voltages on the protected line fall below the trigger levels of the TPD4E02B04-Q1 (usually within 10s of nano-seconds) the device reverts to passive.