JAJSHN5B june 2019 – february 2023 TPS1HB35-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
INPUT VOLTAGE AND CURRENT | |||||||
VDSCLAMP | VDS clamp voltage | 40 | 46 | V | |||
VBBCLAMP | VBB clamp voltage | 58 | 76 | V | |||
VUVLOF | VBB undervoltage lockout falling | Measured with respect to the GND pin of the device | 2.0 | 3 | V | ||
VUVLOR | VBB undervoltage lockout rising | Measured with respect to the GND pin of the device | 2.2 | 3 | V | ||
ISB | Standby current (total device leakage including MOSFET channel) | VBB = 13.5 V, TJ = 25°C VEN = VDIA_EN = 0 V, VOUT = 0 V |
0.1 | µA | |||
VBB = 13.5 V, TJ = 85°C, VEN = VDIA_EN = 0 V, VOUT = 0 V |
0.5 | µA | |||||
ILNOM | Continuous load current | TAMB = 70°C | 5 | A | |||
IOUT(standby) | Output leakage current | VBB = 13.5 V, TJ = 25°C VEN = VDIA_EN = 0 V, VOUT = 0 V |
0.01 | 0.5 | µA | ||
VBB = 13.5 V, TJ = 125°C VEN = VDIA_EN = 0 V, VOUT = 0 V |
1.5 | µA | |||||
IDIA | Current consumption in diagnostic mode | VBB = 13.5 V, ISNS = 0 mA VEN = 0 V, VDIA_EN = 5 V, VOUT = 0V |
3 | 6 | mA | ||
IQ | Quiescent current | VBB = 13.5 V VENx = VDIA_EN = 5 V, IOUT = 0 A |
3 | 6 | mA | ||
tSTBY | Standby mode delay time | VEN = VDIA_EN = 0 V to standby | 12 | 17 | 22 | ms | |
RON CHARACTERISTICS | |||||||
RON | On-resistance (Includes MOSFET and package) |
TJ = 25°C, 6 V ≤ VBB ≤ 28 V | 35 | mΩ | |||
TJ = 150°C, 6 V ≤ VBB ≤ 28 V | 70 | mΩ | |||||
TJ = 25°C, 3 V ≤ VBB ≤ 6 V | 55 | mΩ | |||||
RON(REV) | On-resistance during reverse polarity | TJ = 25°C, -18 V ≤ VBB ≤ -8 V | 35 | mΩ | |||
TJ = 105°C, -18 V ≤ VBB ≤ -8 V | 70 | mΩ | |||||
CURRENT SENSE CHARACTERISTICS | |||||||
KSNS | Current sense ratio IOUT / ISNS |
IOUT = 1 A | 2000 | ||||
ISNSI | Current sense current and accuracy | VEN = VDIA_EN = 5 V, VSEL1 = 0 V | IOUT = 3 A | 1.5 | mA | ||
–5 | 5 | % | |||||
IOUT = 1 A | 0.5 | mA | |||||
–5 | 5 | % | |||||
IOUT = 300 mA | 0.15 | mA | |||||
-6 | 6 | % | |||||
IOUT = 100 mA | 0.05 | mA | |||||
-8.2 | 8.2 | % | |||||
IOUT = 50 mA | 0.025 | mA | |||||
-13 | 13 | % | |||||
IOUT = 20 mA | 0.0095 | mA | |||||
-40 | 35 | % | |||||
TJ SENSE CHARACTERISTICS | |||||||
ISNST | Temperature sense current | VDIA_EN = 5 V, VSEL1 = 5 V | TJ = -40°C | 0.01 | 0.12 | 0.38 | mA |
TJ = 25°C | 0.72 | 0.85 | 0.98 | mA | |||
TJ = 85°C | 1.25 | 1.52 | 1.79 | mA | |||
TJ = 125°C | 1.61 | 1.96 | 2.31 | mA | |||
TJ = 150°C | 1.80 | 2.25 | 2.70 | mA | |||
dISNST/dT | Coefficient | 0.0112 | mA/°C | ||||
SNS CHARACTERISTICS | |||||||
ISNSFH | ISNS fault high-level | VDIA_EN = 5 V, VSEL1 = 0 V | 4 | 4.5 | 5.3 | mA | |
ISNSleak | ISNS leakage | VDIA_EN = 0 V | 1 | µA | |||
CURRENT LIMIT CHARACTERISTICS | |||||||
VSC | Short Circuit Maximum Supply Voltage | Version A | 18 | V | |||
Version B | 18 | V | |||||
Version C | 18 | V | |||||
Version F | 18 | V | |||||
ICL,max | Current Limit Maximum | Device Version C, TJ = -40°C to 150°C | RILIM = 8.25 kΩ | 13 | A | ||
RILIM = 10 kΩ | 12.5 | A | |||||
RILIM = 15 kΩ | 11.5 | A | |||||
RILIM = 25 kΩ | 9 | A | |||||
ICL | Current Limit Threshold | Device Version C, TJ = -40°C to 150°C | RILIM = GND, open, or out of range | 14 | A | ||
RILIM = 8.25 kΩ | 4.4 | 6 | 8.4 | A | |||
RILIM = 25 kΩ | 1.52 | 2.5 | 3.48 | A | |||
Device Version A, TJ = -40°C to 150°C | RILIM = GND, open, or out of range | 14 | A | ||||
RILIM = 5 kΩ | 8.2 | 10 | 12.7 | A | |||
RILIM = 25 kΩ | 1.25 | 2 | 2.66 | A | |||
Device Version B, TJ = -40°C to 150°C | RILIM = GND, open, or out of range | 33.3 | A | ||||
RILIM = 5 kΩ | 18.24 | 22 | 27.9 | A | |||
RILIM = 25 kΩ | 3.15 | 4.4 | 5.65 | A | |||
Device Version F | TJ = 25°C | 30.6 | 34 | 40.8 | A | ||
TJ = 150°C | 23.8 | 26.5 | 31.8 | A | |||
KCL | Current Limit Ratio | Version A/C | 50 | A * kΩ | |||
Version B | 110 | A * kΩ | |||||
FAULT CHARACTERISTICS | |||||||
VOL | Open-load (OL) detection voltage | VEN = 0 V, VDIA_EN = 5 V, VSEL1 = 0 V | 2 | 3 | 4 | V | |
tOL1 | OL and STB indication-time from EN falling | VEN = 5 V to 0 V, VDIA_EN = 5 V, VSEL1 = 0 V IOUT = 0 mA, VOUT = 4 V |
300 | 500 | 700 | µs | |
tOL2 | OL and STB indication-time from DIA_EN rising | VEN = 0 V, VDIA_EN = 0 V to 5 V, VSEL1 = 0 V IOUT = 0 mA, VOUT = 4 V |
2 | 20 | 50 | µs | |
tOL3 | OL and STB indication-time from VOUT rising | VEN = 0 V, VDIA_EN = 5 V, VSEL1 = 0 V IOUT = 0 mA, VOUT = 0 V to 4 V |
2 | 20 | 50 | µs | |
TABS | Thermal shutdown | 150 | °C | ||||
TREL | Relative thermal shutdown | 60 | °C | ||||
THYS | Thermal shutdown hysteresis | 20 | 25 | 30 | °C | ||
tFAULT | Fault shutdown indication-time | VDIA_EN = 5 V Time between switch shutdown and ISNS settling at ISNSFH |
50 | µs | |||
tRETRY | Retry time | Time from fault shutdown until switch re-enable (thermal shutdown or current limit). | 1 | 2 | 3 | ms | |
EN PIN CHARACTERISTICS | |||||||
VIL, EN | Input voltage low-level | No GND network diode | 0.8 | V | |||
VIH, EN | Input voltage high-level | No GND network diode | 2.0 | V | |||
VIHYS, EN | Input voltage hysteresis | 350 | mV | ||||
REN | Internal pulldown resistor | 0.5 | 1 | 2 | MΩ | ||
IIL, EN | Input current low-level | VEN = 0.8 V | 0.8 | µA | |||
IIH, EN | Input current high-level | VEN = 5 V | 5.0 | µA | |||
DIA_EN PIN CHARACTERISTICS | |||||||
VIL, DIA_EN | Input voltage low-level | No GND network diode | 0.8 | V | |||
VIH, DIA_EN | Input voltage high-level | No GND network diode | 2.0 | V | |||
VIHYS, DIA_EN | Input voltage hysteresis | 350 | mV | ||||
RDIA_EN | Internal pulldown resistor | 0.5 | 1 | 2 | MΩ | ||
IIL, DIA_EN | Input current low-level | VDIA_EN = 0.8 V | 0.8 | µA | |||
IIH, DIA_EN | Input current high-level | VDIA_EN = 5 V | 5.0 | µA | |||
SEL1 PIN CHARACTERISTICS | |||||||
VIL, SEL1 | Input voltage low-level | No GND network diode | 0.8 | V | |||
VIH, SEL1 | Input voltage high-level | No GND network diode | 2.0 | V | |||
VIHYS, SEL1 | Input voltage hysteresis | 350 | mV | ||||
RSEL1 | Internal pulldown resistor | 0.5 | 1 | 2 | MΩ | ||
IIL, SEL1 | Input current low-level | VSEL1 = 0.8 V | 0.8 | µA | |||
IIH, SEL1 | Input current high-level | VSEL1 = 5 V | 5.0 | µA | |||
LATCH PIN CHARACTERISTICS | |||||||
VIL, LATCH | Input voltage low-level | No GND network diode | 0.8 | V | |||
VIH, LATCH | Input voltage high-level | No GND network diode | 2.0 | V | |||
VIHYS, LATCH | Input voltage hysteresis | 350 | mV | ||||
RLATCH | Internal pulldown resistor | 0.5 | 1 | 2 | MΩ | ||
IIL, LATCH | Input current low-level | VLATCH = 0.8 V | 0.8 | µA | |||
IIH, LATCH | Input current high-level | VLATCH = 5 V | 5.0 | µA |