JAJSJE1A July 2021 – December 2021 TPS1HC100-Q1
PRODUCTION DATA
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Method 1: block diode connected with VBB. Both the device and load are protected when in reverse polarity. The blocking diode does not allow any of the current to flow during reverse battery condition.
Method 2 (GND network protection): only the high-side device is protected under this connection. The load reverse current is limited by the impedance of the load itself. Note when reverse polarity happens, the continuous reverse current through the power FET must not make the heat build up be greater than the absolute maximum junction temperature. This can be calculated using the RON(REV) value and the RθJA specification. In the reverse battery condition it is important that the FET comes on to lower the power dissipation. This action is achieved through the path from EN to system ground where the positive voltage is being applied. No matter what types of connection are between the device GND and the board GND, if a GND voltage shift happens, ensure the following proper connections for the normal operation:
If multiple high-side power switches are used, the resistor can be shared among devices.
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