JAJSPW9K December   2003  – June 2024 TPS2061 , TPS2062 , TPS2063 , TPS2065 , TPS2066 , TPS2067

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 概要 (続き)
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Recommended Operating Conditions
    3. 6.3 Thermal Information
    4. 6.4 Electrical Characteristics
    5. 6.5 Typical Characteristics (TPS2061, TPS2062, TPS2065, and TPS2066)
    6. 6.6 Typical Characteristics (TPS2063 & TPS2067)
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1  Functional Block Diagram
    2. 8.2  Power Switch
    3. 8.3  Charge Pump
    4. 8.4  Driver
    5. 8.5  Enable ( ENx or ENx)
    6. 8.6  Current Sense
    7. 8.7  Overcurrent
      1. 8.7.1 Overcurrent Conditions (TPS2063 and TPS2067)
      2. 8.7.2 Overcurrent Conditions (TPS2061, TPS2062, TPS2065, and TPS2066)
    8. 8.8  Overcurrent ( OCx)
    9. 8.9  Thermal Sense
    10. 8.10 Undervoltage Lockout
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1  Power-supply Considerations
      2. 9.1.2  OC Response
      3. 9.1.3  Power Dissipation and Junction Temperature
      4. 9.1.4  Thermal Protection
      5. 9.1.5  Undervoltage Lockout (UVLO)
      6. 9.1.6  Universal Serial Bus (USB) Applications
      7. 9.1.7  Host/Self-Powered and Bus-powered Hubs
      8. 9.1.8  Low-power Bus-powered and High-Power Bus-Powered Functions
      9. 9.1.9  USB Power-distribution Requirements
      10. 9.1.10 Generic Hot-Plug Applications
  11. 10Device and Documentation Support
    1. 10.1 Device Support
    2. 10.2 Documentation Support
    3. 10.3 ドキュメントの更新通知を受け取る方法
    4. 10.4 サポート・リソース
    5. 10.5 Trademarks
    6. 10.6 静電気放電に関する注意事項
    7. 10.7 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • D|8
  • DBV|5
  • DGN|8
サーマルパッド・メカニカル・データ
発注情報

6.4 Electrical Characteristics

over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = 1 A, VI( ENx) = 0 V, or VI(ENx) = 5.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
rDS(on) Static drain-source on-state resistance, 5-V operation and 3.3-V operation VI(IN) = 5 V or 3.3 V, IO = 1 A, -40°C ≤ TJ ≤ 125°C D and DGN packages 70 135 mΩ
DBV package 95 140
Static drain-source on-state resistance, 2.7-V
operation		 VI(IN) = 2.7 V, IO = 1 A, -40°C ≤ TJ ≤ 125°C D and DGN packages 75 150 mΩ
tr Rise time, output VI(IN) = 5.5 V CL = 1 μF, RL = 5 Ω, TJ = 25°C 0.6 1.5 ms
VI(IN) = 2.7 V 0.4 1
tf Fall time, output VI(IN) = 5.5 V 0.05 0.5
VI(IN) = 2.7 V 0.05 0.5
ENABLE INPUT EN OR EN
VIH High-level input voltage 2.7 V ≤ VI(IN) ≤ 5.5 V 2 V
VIL Low-level input voltage 2.7 V ≤ VI(IN) ≤ 5.5 V 0.8
II Input current VI( ENx) = 0 V or 5.5 V, VI(ENx) = 0 V or 5.5 V -0.5 0.5 μA
ton Turnon time CL = 100 μF, RL = 5 Ω 3 ms
toff Turnoff time CL = 100 μF, RL = 5 Ω 10
CURRENT LIMIT
IOS Short-circuit output current VI(IN) = 5 V, OUT connected to GND,
device enabled into short-circuit		 TJ = 25°C 1.1 1.5 1.9 A
-40°C ≤ TJ ≤ 125°C 1.1 1.5 2.1
IOC(2) Overcurrent trip threshold VI(IN) = 5 V, current ramp (≤ 100 A/s) on OUT TPS2063, TPS2067 1.6 2.4 3.0 A
SUPPLY CURRENT (TPS2061, TPS2065)
Supply current, low-level output No load on OUT, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 TJ = 25°C 0.5 1 μA
-40°C ≤ TJ ≤ 125°C 0.5 5
Supply current, high-level output No load on OUT, VI( ENx) = 0 V,
or VI(ENx) = 5.5 V		 TPS2061 TPS2065 TJ = 25°C 75 95 μA
-40°C ≤ TJ ≤ 125°C 75 95
Leakage current OUT connected to ground, VI( EN) = 5.5 V,
or VI(EN) = 0 V		 -40°C ≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, IN = ground TJ = 25°C 0 μA
SUPPLY CURRENT (TPS2062, TPS2066)
Supply current, low-level output No load on OUT, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 TJ = 25°C 0.5 1 μA
-40°C ≤ TJ ≤ 125°C 0.5 5
Supply current, high-level output No load on OUT, VI( ENx) = 0 V,
or VI(ENx) = 5.5 V		 TJ = 25°C 95 120 μA
-40°C ≤ TJ ≤ 125°C 95 120
Leakage current OUT connected to ground, VI(/ENx) = 5.5 V,
or VI(ENx) = 0 V		 -40°C ≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, IN = ground TJ = 25°C 0.2 μA
SUPPLY CURRENT (TPS2063, TPS2067)
Supply current, low-level output No load on OUT, VI( ENx) = 0 V TJ = 25°C 0.5 2 μA
-40°C ≤ TJ ≤ 125°C 0.5 10
Supply current, high-level output No load on OUT, VI( ENx) = 5.5 V TJ = 25°C 65 90 μA
-40°C ≤ TJ ≤ 125°C 65 110
Leakage current OUT connected to ground, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 -40°C ≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, INx = ground TJ = 25°C 0.2 μA
UNDERVOLTAGE LOCKOUT (TPS2063, TPS2067)
Low-level input voltage, IN 2 2.5 V
Hysteresis, IN TJ = 25°C 75 mV
UNDERVOLTAGE LOCKOUT (TPS2061, TPS2062, TPS2065, TPS2066)
Low-level input voltage, IN 2 2.6 V
Hysteresis, IN TJ = 25°C 75 mV
OVERCURRENT OC1 and OC2
Output low voltage, VOL(OCx) IO( OCx) = 5 mA 0.4 V
Off-state current VO( OCx) = 5 V or 3.3 V 1 μA
OC deglitch OCx assertion or deassertion 4 8 15 ms
THERMAL SHUTDOWN(3)
Thermal shutdown threshold 135 °C
Recovery from thermal shutdown 125 °C
Hysteresis 10 °C
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
(2) TPS2061, TSP2062, TPS2065, and TPS2066 do not have overcurrent trip threshold. Current is limited to IOS under different test condition. Check Section 8.7 for more details.
(3) The thermal shutdown only reacts under overcurrent conditions.