JAJSCB8C May   2016  – September 2017 TPS22990

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
  4. 改訂履歴
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics—VBIAS = 5 V
    6. 7.6 Electrical Characteristics—VBIAS = 3.3 V
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 On and Off Control
      2. 9.3.2 Adjustable Rise Time
      3. 9.3.3 Power Good (PG)
      4. 9.3.4 Quick Output Discharge (QOD) (TPS22990 Only)
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Input to Output Voltage Drop
      2. 10.1.2 Input Capacitor
      3. 10.1.3 Thermal Consideration
      4. 10.1.4 PG Pull Up Resistor
      5. 10.1.5 Power Sequencing
      6. 10.1.6 Standby Power Reduction
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Managing Inrush Current
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 ドキュメントのサポート
      1. 13.1.1 関連資料
    2. 13.2 ドキュメントの更新通知を受け取る方法
    3. 13.3 コミュニティ・リソース
    4. 13.4 商標
    5. 13.5 静電気放電に関する注意事項
    6. 13.6 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

Application Information

Input to Output Voltage Drop

The input to output voltage drop in the device is determined by the RON of the device and the load current. The RON of the device depends upon the VIN and VBIAS condition of the device. See the RON specification in the Electrical Characteristics—VBIAS = 5 V table of this datasheet. Once the RON of the device is determined based upon the VIN and VBIAS conditions, use Equation 3 to calculate the input to output voltage drop.

Equation 3. TPS22990 Equation_2_SLVSDK1A.gif

where

  • ΔV is the voltage drop from VIN to VOUT
  • ILOAD is the load current
  • RON is the on-resistance of the device for a specific VIN and VBIAS
  • An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated

Input Capacitor

It is recommended to use a capacitor between VIN and GND close to the device pins. This helps limit the voltage drop on the input supply caused by transient inrush currents when the switch is turned on into a discharged capacitor at the load. A 1-μF ceramic capacitor, CIN, is usually sufficient. Higher values of CIN can be used to further reduce the voltage drop. A CIN to CL ratio of 10 to 1 is recommended for minimizing VIN dip caused by inrush currents during startup, where CL is the load capacitance.

Thermal Consideration

The maximum junction temperature should be limited to below 125°C. Use Equation 4 to calculate the maximum allowable dissipation, PD(max) for a given output load current and ambient temperature. RθJA is highly dependent upon board layout.

Equation 4. TPS22990 Equation_3_SLVSDK1A.gif

where

  • PD(max) is the maximum allowable power dissipation
  • TJ(max) is the maximum allowable junction temperature
  • TA is the ambient temperature
  • RθJA is the junction-to-air thermal impedance

PG Pull Up Resistor

The PG output is an open drain signal which connects to a voltage source through a pull up resistor RPU. The PG signal can be used to drive the enable pins of downstream devices, EN. PG is active high, and its voltage is given by Equation 5.

Equation 5. TPS22990 Equation_4_SLVSDK1A.gif

where

  • VOUT is the voltage where PG is tied to
  • IPG,LK is the leakage current into PG pin
  • IEN,LK is the leakage current into the EN pin driven by PG
  • RPU is the pull up resistance

VPG needs to be higher than VIH, MIN of the EN pin to be treated as logic high. The maximum RPU is determined by Equation 6.

Equation 6. TPS22990 Equation_5_SLVSDK1.gif

When PG is disabled, with 1 mA current into PG pin (IPG = 1 mA), VPG,OL is less than 0.2 V and treated as logic low as long as VIL,MAX of the EN pin is greater than 0.2 V. The minimum RPU is determined by Equation 7.

Equation 7. TPS22990 Equation_6_SLVSDK1A.gif

RPU can be chosen within the range defined by RPU,MIN and RPU,MAX. RPU = 10 kΩ is used for characterization.

Power Sequencing

The TPS22990 has an integrated power good indicator which can be used for power sequencing. As shown in Figure 36, the switch to the second load is controlled by the PG signal from the first switch. This ensures that the power to load 2 is only enabled after the power to load 1 is enabled and the first switch is full load ready.

TPS22990 application2.gif Figure 36. Power Sequencing

Standby Power Reduction

Any end equipment that is being powered from a battery has a need to reduce current consumption in order to maintain the battery charge for a longer time. The TPS22990 devices help to accomplish this reduction by turning off the supply to the downstream modules that are in standby state and significantly reduce the leakage current overhead of the standby modules as shown in Figure 37.

TPS22990 application1.gif Figure 37. Standby Power Reduction

Typical Application

Figure 38 demonstrates how to use TPS22990 to limit inrush current to output capacitance.

TPS22990 typical_application.gif Figure 38. Powering a Downstream Module

Design Requirements

For this design example, use the input parameters shown in Table 4.

Table 4. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE
VBIAS 3.3 V
VIN 1.05 V
CL 10 μF
RL None
Maximum acceptable inrush current 100 mA

Detailed Design Procedure

Managing Inrush Current

When the switch is enabled, the output capacitors must be charged up from 0 V to VIN. This charge arrives in the form of inrush current. Inrush current can be calculated using Equation 8.

Equation 8. TPS22990 Equation_7_SLVSDK1A.gif

where

  • IINRUSH is the Inrush current
  • CL is the Load capacitance
  • dV/dt is the Output slew rate
  • VIN is the Input voltage
  • tR is the rise time

Minimum acceptable rise time can be calculated using the design requirements and the inrush current equation. See Equation 9.

Equation 9. TPS22990 Equation_8_SLVSDK1A.gif

The TPS22990 has very fast timing without a CT capacitor (CT). The typical rise time is 12 μs at VBIAS = 3.3 V, VIN = 1.05 V, RL = 10 Ω, and CL = 0.1 µF. As shown in Figure 39, the rise time is much smaller than 84 µs and the inrush current is 460 mA without CT. The CT for the required rise time must be calculated using Equation 1. For 84 µs, the calculated CT = 5259 pF. Figure 40 shows the inrush current is less than 100 mA with CT = 6800 pF.

Application Curves

TPS22990 scope_shot_09_slvsdk1a.png
Figure 39. . Inrush Current with CT = 0 pF
TPS22990 sc101.gif
Figure 40. Inrush Current with CT = 6800 pF